DMN10H170SVT-7 Power MOSFET by Diodes Incorporated

The DMN10H170SVT-7 is a high-performance, surface-mount Power MOSFET manufactured by Diodes Incorporated, a leading global manufacturer and supplier of high-quality application-specific standard products. This device is designed to meet the stringent requirements of modern electronic circuits, providing efficient power management and switching with minimal losses.

Key Features:

• Device Type: MOSFET
• Configuration: Single
• Channel Mode: Enhancement Mode
• Channel Type: N-Channel
• Drain-Source Voltage (Vdss): 170V
• Continuous Drain Current (Id): 4.2A
• Power Dissipation (Pd): 1.25W
• Rds On (Max) @ Id, Vgs: 270 mOhm @ 2.1A, 10V
• Gate Charge (Qg) (Max) @ Vgs: 7.3nC @ 10V
• Operating Temperature: -55°C to +150°C
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

The DMN10H170SVT-7 is typically used in a variety of applications, including power management in portable devices, DC/DC converters, load switches, and other high-efficiency applications. Its high drain-source voltage and continuous drain current rating make it suitable for high voltage applications, while its low on-resistance ensures high efficiency and low heat generation.

Its compact SOT-23-3 package makes it ideal for space-constrained applications, and its surface-mount design allows for efficient assembly in automated manufacturing processes. Additionally, the DMN10H170SVT-7 is designed to withstand high energy pulses in the avalanche and commutation modes, which is critical for reliable operation under harsh conditions.

With its combination of high performance, reliability, and efficiency, the DMN10H170SVT-7 from Diodes Incorporated is an excellent choice for designers looking to optimize their power management solutions. Its compliance with RoHS standards also ensures that it meets environmental regulations, making it a responsible choice for both commercial and industrial applications.