DMN10H220LFDF-7 - N-Channel Enhancement Mode Field Effect Transistor from Diodes Incorporated

The DMN10H220LFDF-7 is a high-performance, N-Channel enhancement mode field effect transistor (MOSFET) designed and manufactured by Diodes Incorporated, a leading global provider of discrete, logic, analog, and mixed-signal semiconductors. This MOSFET is engineered to deliver efficient power management and signal amplification in a wide range of applications.

Featuring a compact form factor, the DMN10H220LFDF-7 comes in a space-saving DFN2020-6 (Type B) package, making it an excellent choice for size-constrained applications without compromising on performance. With its low on-resistance (R<sub>DS(on)) and high continuous drain current (I<sub>D), this MOSFET ensures minimal power loss and heat generation, thereby enhancing system reliability and efficiency.

The DMN10H220LFDF-7 boasts an impressive threshold voltage (V<sub>GS(th)) and a maximum drain-source voltage (V<sub>DSS) that allows it to handle high switching applications with ease. Its fast switching speed is suitable for high-frequency circuits, while its low gate charge (Q<sub>g) reduces the power required to drive the transistor, further improving the overall energy efficiency of the system.

Key Specifications:

• Drain-Source Voltage (V<sub>DSS): 20V
• Continuous Drain Current (I<sub>D): 6.7A
• On-Resistance (R<sub>DS(on)): 20mΩ at V<sub>GS = 4.5V
• Gate-Source Voltage (V<sub>GS): ±8V
• Maximum Power Dissipation (P<sub>D): 1.25W
• Operating Temperature Range: -55°C to +150°C
• Package: DFN2020-6 (Type B)

Designed for use in power management tasks, the DMN10H220LFDF-7 is particularly well-suited for load switch, battery protection, and DC-DC conversion applications. Its robustness is further enhanced by its ability to withstand high energy pulses in the avalanche and commutation modes, making it a reliable choice for demanding environments.

Whether you are designing a portable device, power supply, or any other application requiring a high-efficiency MOSFET, the DMN10H220LFDF-7 from Diodes Incorporated offers the performance, durability, and miniaturization necessary to meet your design challenges.