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DMN2015UFDF-7

Part No DMN2015UFDF-7
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 15.2A 6UDFN / N-Channel 20 V 15.2A (Ta) 1.8W (Ta) Surface Mount U-DFN2020-6
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Diodes Incorporated
Package Tape & Reel (TR)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 15.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Rds On (Max) @ Id, Vgs 9mOhm @ 8.5A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 42.3 nC @ 10 V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 1439 pF @ 10 V
Power Dissipation (Max) 1.8W (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package U-DFN2020-6
Package / Case 6-UDFN Exposed Pad
Base Product Number DMN2015
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 3,000
Win Source Part Number 979031-DMN2015UFDF-7
Ultra Librarian 3D Model Ultra Librarian DMN2015UFDF-7 CAD Model

Description

Product Overview: DMN2015UFDF-7 from Diodes Incorporated

The DMN2015UFDF-7 is a high-performance, N-channel enhancement mode Field Effect Transistor (FET) produced by Diodes Incorporated. This component is designed to offer efficient power control and management in a wide range of electronic applications. Its compact form factor and low on-resistance make it an ideal choice for space-constrained and power-sensitive designs.

Key Features and Benefits

  • Low On-Resistance: The FET features a very low on-resistance (RDS(on)), which results in reduced conduction losses and improved power efficiency, making it suitable for high-efficiency power management systems.
  • High-Speed Switching: DMN2015UFDF-7 supports high-speed switching operations, which is crucial for applications that require fast response times, such as DC-DC converters and power supplies.
  • Power Saver: With its low threshold voltage, this FET ensures low power consumption in the application circuit, contributing to energy savings and longer battery life in portable devices.
  • Surface-Mount Package: The device comes in a space-saving DFN2020-6 (Type B) surface-mount package, which allows for a compact PCB layout and is suitable for automated assembly processes.
  • RoHS Compliant: Complying with RoHS standards, the DMN2015UFDF-7 is free from hazardous substances, making it an environmentally friendly choice for electronic manufacturers.

Applications

The DMN2015UFDF-7 is versatile and can be used in various applications, including:

  • Power Management Circuits
  • Load Switches
  • DC-DC Converters
  • Battery Management Systems
  • Portable Electronic Devices
  • Computing Devices

Diodes Incorporated's commitment to quality and performance is evident in the DMN2015UFDF-7. It is designed to meet the stringent requirements of modern electronic devices, providing reliability and efficiency. Whether you are designing a power supply for a computer, a battery management system for a smartphone, or any other power-sensitive application, the DMN2015UFDF-7 is an excellent choice for your design needs.

For detailed specifications and application notes, designers and engineers are encouraged to refer to the official datasheet provided by Diodes Incorporated.

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Pricing & Ordering

Quantity Unit Price Ext. Price
185+ $0.3128 $57.8680
455+ $0.2566 $116.7530
700+ $0.2487 $174.0900
960+ $0.2407 $231.0720
1,245+ $0.2326 $289.5870
1,665+ $0.2086 $347.3190
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,203 pieces
MOQ: 185 pcs
Order Increment : 1 pcs
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