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DMN2020UFCL-7

Part No DMN2020UFCL-7
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 9A 6DFN
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 900mV @ 250μA
Max Gate Charge 21.5nC @ 4.5V
Max Input Capacitance 1788pF @ 10V
Maximum Gate-Source Voltage ±10V
Power Dissipation (Max) 610mW (Ta)
Maximum Rds On at Id,Vgs 14 mOhm @ 9A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package X1-DFN1616-6 (Type E)
Dimension 6-PowerUFDFN
Win Source Part Number 1033721-DMN2020UFCL-7
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian DMN2020UFCL-7 CAD Model

Description

Introducing the DMN2020UFCL-7 MOSFET by Diodes Incorporated

Diodes Incorporated presents the DMN2020UFCL-7, a high-performance, N-Channel enhancement mode Field Effect Transistor (FET) designed for a variety of applications. This MOSFET is built using advanced trench technology to provide excellent RDS(on) and low gate charge. The DMN2020UFCL-7 is a testament to Diodes Incorporated's commitment to providing energy-efficient and reliable components for modern electronic applications.

Key Features

  • Low On-Resistance: With an RDS(on) as low as 20 mOhms, this MOSFET ensures minimal power loss and higher efficiency in operation.
  • High-Speed Switching: The device is optimized for fast switching, making it suitable for high-frequency applications.
  • Low Gate Charge: Its low gate charge enables faster switching speeds and reduces power consumption during the switching phase.
  • Low Threshold Voltage: The low threshold voltage ensures that the MOSFET can be driven at lower voltages, making it compatible with low-voltage logic signals.
  • Surface-Mount Package: The DMN2020UFCL-7 comes in a compact DFN2020 package, which is perfect for space-constrained applications.

Applications

The versatility of the DMN2020UFCL-7 allows it to be used in a wide range of applications, including:

  • Power Management Circuits
  • Load Switches
  • DC-DC Converters
  • Battery Management Systems
  • Motor Drives
  • Computing and Networking Systems

Reliability and Performance

The DMN2020UFCL-7 is designed to meet the stringent requirements of modern electronic systems. Its robustness is ensured through rigorous testing and quality control measures adopted by Diodes Incorporated. The device is RoHS compliant, reflecting the company's commitment to environmental sustainability.

Whether you're designing power-efficient consumer electronics, industrial control systems, or portable devices, the DMN2020UFCL-7 MOSFET from Diodes Incorporated offers the performance, reliability, and efficiency needed to enhance your product's capabilities.

Ordering Information

The DMN2020UFCL-7 is available for order now. Contact Diodes Incorporated or an authorized distributor for pricing and availability. Enhance your designs with the power and efficiency of the DMN2020UFCL-7 MOSFET.

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Pricing & Ordering

Quantity Unit Price Ext. Price
260+ $0.1937 $50.3620
630+ $0.1590 $100.1700
975+ $0.1540 $150.1500
1,345+ $0.1490 $200.4050
1,735+ $0.1441 $250.0135
2,325+ $0.1292 $300.3900
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,000 pieces
MOQ: 260 pcs
Order Increment : 1 pcs
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