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DMN2029USD-13

Part No DMN2029USD-13
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 20V 5.8A 8SO
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 5.8A
Maximum Rds On at Id,Vgs 25 mOhm @ 6.5A, 4.5V
Gate-Source Threshold Voltage 1.5V @ 250μA
Max Gate Charge 18.6nC @ 8V
Max Input Capacitance 1171pF @ 10V
Maximum Power Dissipation 1.2W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 1033724-DMN2029USD-13
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian DMN2029USD-13 CAD Model

Description

Introducing the DMN2029USD-13 MOSFET from Diodes Incorporated

The DMN2029USD-13 is a cutting-edge, dual N-channel enhancement mode field effect transistor (MOSFET) brought to you by the renowned manufacturer, Diodes Incorporated. This MOSFET is designed to deliver high-performance efficiency and power management in a compact, surface-mount package, making it an ideal choice for a wide range of applications.

Encased in a space-saving SO-8 package, the DMN2029USD-13 boasts a dual MOSFET configuration that allows for flexibility in design and application. Each MOSFET in the device can handle a continuous drain current (ID) of up to 7.5A, which makes it suitable for high-density power applications. The low on-resistance (RDS(on)) of just 24mΩ at VGS of 10V ensures minimal power loss and improved efficiency, a crucial factor in power-sensitive designs.

With a maximum power dissipation of 2.5W, the DMN2029USD-13 can comfortably handle moderate power levels, making it a reliable component for power management tasks. The device operates over a wide temperature range, from -55°C to 150°C, ensuring stability and performance even under extreme conditions. This temperature range, coupled with the device's robust thermal performance, provides designers with a versatile component that can be used in harsh environments.

The DMN2029USD-13 is also characterized by its fast switching speed, which is essential for applications requiring quick response times, such as high-frequency power converters and motor drives. This feature, combined with the device's low gate charge (Qg), contributes to its overall efficiency, reducing switching losses and improving performance.

Whether you're designing power supplies, DC-DC converters, or load switches, the DMN2029USD-13 from Diodes Incorporated is engineered to meet the needs of modern electronic systems. Its combination of high current capability, low on-resistance, fast switching, and thermal efficiency makes it a reliable and versatile choice for your power management solutions.

Upgrade your designs with the DMN2029USD-13 MOSFET and experience the difference in performance and efficiency that Diodes Incorporated can offer.

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Pricing & Ordering

Quantity Unit Price Ext. Price
235+ $0.2159 $50.7365
565+ $0.1772 $100.1180
875+ $0.1717 $150.2375
1,205+ $0.1661 $200.1505
1,560+ $0.1606 $250.5360
2,085+ $0.1440 $300.2400
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,080 pieces
MOQ: 235 pcs
Order Increment : 1 pcs
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