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DMN2040U-13

Part No DMN2040U-13
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 6A SOT23 T&R 1
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Diodes Incorporated
Series -
Package Tape & Reel
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 25mOhm @ 8.2A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 7.5 nC @ 4.5 V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 667 pF @ 10 V
FET Feature -
Power Dissipation (Max) 800mW (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-3
Package / Case TO-236-3, SC-59, SOT-23-3
Base Product Number DMN2040
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 1376782-DMN2040U-13
Ultra Librarian 3D Model Ultra Librarian DMN2040U-13 CAD Model

Description

DMN2040U-13 MOSFET by Diodes Incorporated

The DMN2040U-13 is a high-performance, N-channel enhancement mode field effect transistor (FET) designed and manufactured by Diodes Incorporated. This MOSFET is built using advanced trench technology to provide excellent RDS(on) and low gate charge. The DMN2040U-13 is a versatile component that caters to a wide range of applications, including power management, load switching, and conversion in computing, consumer electronics, lighting, and industrial systems.

Key Features

  • Low On-Resistance: The DMN2040U-13 boasts an extremely low on-resistance (RDS(on)) of typically 20 mΩ at VGS = 10V, which enhances its efficiency in conducting applications.
  • High Continuous Drain Current: It supports a high continuous drain current (ID) of up to 6.3A, making it suitable for high-power applications.
  • High-Speed Switching: The MOSFET's fast switching speed is ideal for high-frequency power switching applications.
  • Low Threshold Voltage: A low threshold voltage ensures that the MOSFET can be driven at lower gate voltages, making it compatible with low-voltage logic levels.
  • Low Gate Charge: Its low gate charge (Qg) facilitates faster switching and reduced switching losses.
  • Surface Mount Package: The device comes in a space-saving SOT-23 package, which is suitable for compact designs.

Applications

  • Power Management
  • DC/DC Converters
  • Battery Management Systems
  • Load Switch
  • Motor Control

With its impressive power density and energy efficiency, the DMN2040U-13 by Diodes Incorporated is a reliable and cost-effective solution for designers looking to optimize their power systems. Its robust thermal performance and durability under high-switching frequencies make it an excellent choice for modern electronic applications where space and power efficiency are critical. Whether for portable devices, power supplies, or motor control circuits, the DMN2040U-13 stands out as a versatile component that delivers performance and reliability.

For detailed specifications, application notes, and additional resources, interested parties are encouraged to visit the official Diodes Incorporated website or contact their local sales representative for more information.

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Pricing & Ordering

Quantity Unit Price Ext. Price
430+ $0.1168 $50.2240
1,045+ $0.0958 $100.1110
1,620+ $0.0928 $150.3360
2,230+ $0.0898 $200.2540
2,885+ $0.0868 $250.4180
3,855+ $0.0779 $300.3045
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 11,694 pieces
MOQ: 430 pcs
Order Increment : 1 pcs
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