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DMN2055UW-7

Part No DMN2055UW-7
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET BVDSS: 8V~24V SOT323 T&R
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Diodes Incorporated
Series -
Package Tape & Reel
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 3.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 46mOhm @ 3.6A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 4.3 nC @ 4.5 V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 400 pF @ 10 V
FET Feature -
Power Dissipation (Max) 520mW (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-323
Package / Case SC-70, SOT-323
Base Product Number DMN2055
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 1376891-DMN2055UW-7
Ultra Librarian 3D Model Ultra Librarian DMN2055UW-7 CAD Model

Description

The DMN2055UW-7 is a high-performance, N-channel enhancement mode field-effect transistor (MOSFET) designed and manufactured by Diodes Incorporated. This MOSFET is a versatile and reliable component that is ideal for a wide range of applications, from power management to switching circuits.

Key Features

  • Low On-Resistance (RDS(on)): The device offers an ultra-low on-resistance of just 8.5mΩ at VGS = 4.5V, which translates to high efficiency and low conduction losses in applications.
  • High Continuous Drain Current (ID): With a continuous drain current of 4.5A, the DMN2055UW-7 can handle significant power, making it suitable for high current applications.
  • Advanced Packaging: Enclosed in a small and leadless ultra-small X3-DFN2020-6 (Type B) package, the MOSFET saves valuable board space without compromising performance.
  • Low Threshold Voltage: A low threshold voltage ensures that the MOSFET can be driven at lower gate voltages, making it compatible with low-voltage logic signals.
  • High-Speed Switching: The DMN2055UW-7 is designed for fast switching applications, contributing to improved overall efficiency in power conversion and regulation circuits.

Applications

The versatility of the DMN2055UW-7 MOSFET makes it suitable for a variety of applications, including:

  • Power Management Circuits
  • DC/DC Converters
  • Load/Power Switches
  • Battery Management Systems
  • Motor Drives
  • Computing and Storage Platforms

Reliability and Quality

Diodes Incorporated ensures that the DMN2055UW-7 meets the highest standards of quality and reliability. Each MOSFET undergoes rigorous testing and quality control processes to ensure it performs to the specified parameters in a wide range of environmental conditions.

Environmental Compliance

The DMN2055UW-7 is RoHS compliant and free from environmentally harmful substances. It is designed with green manufacturing processes in mind, making it a responsible choice for both the environment and electronic projects.

For detailed specifications and application notes, designers are encouraged to consult the official datasheet and support documentation provided by Diodes Incorporated.

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Pricing & Ordering

Quantity Unit Price Ext. Price
560+ $0.0893 $50.0080
1,195+ $0.0837 $100.0215
1,860+ $0.0808 $150.2880
2,660+ $0.0752 $200.0320
3,455+ $0.0724 $250.1420
4,320+ $0.0695 $300.2400
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 19,270 pieces
MOQ: 560 pcs
Order Increment : 1 pcs
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