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DMN2300UFB4-7B

Name: DMN2300UFB4-7B
Brand: Diodes Incorporated
SKU: 448677
Availability: InStock
Rating: 5 (582 reviews)

Part No	DMN2300UFB4-7B
Manufacturer	Diodes Incorporated
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 20V 1.3A 3DFN
Datasheet	DMN2300UFB4-7B Datasheet
Sample
ECAD Module

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Shipping Information

Shipped from	HK warehouse
Expected Shipping Date	Ship today if order in (HKT)
Supplier Lead-Time	Call for availability
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Pricing & Ordering $0.0996

Quantity

Unit Price

Ext. Price

290+

$0.1750

$50.750

695+

$0.1440

$100.080

1,080+

$0.1390

$150.120

1,485+

$0.1350

$200.475

1,925+

$0.1300

$250.250

2,565+

$0.1170

$300.105

* The above prices does not include taxes and freight rates, which will be calculated on the order pages.

Availability: 35,360 pieces

MOQ: 290 pcs

Order Increment : 1 pcs

Qty:

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Products specifications

Categories	Discrete Semiconductor Products
Manufacturer	Diodes Incorporated
Packaging	Reel - TR
Status	Active
Polarity	N-Channel
Technology	MOSFET
Drain-Source Breakdown Voltage	20V
Continuous Drain Current at 25°C	1.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.5V, 4.5V
Gate-Source Threshold Voltage	950mV @ 250μA
Max Gate Charge	1.6nC @ 4.5V
Max Input Capacitance	64.3pF @ 25V
Maximum Gate-Source Voltage	±8V
Power Dissipation (Max)	500mW (Ta)
Maximum Rds On at Id,Vgs	175 mOhm @ 300mA, 4.5V
Temperature Range - Operating	-55°C to 150°C (TJ)
Mounting	SMD (SMT)
Case / Package	X2-DFN1006-3
Dimension	3-XFDFN
Win Source Part Number	1033734-DMN2300UFB4-7B
Popularity	Medium
Fake Threat In the Open Market	56 pct.
Supply and Demand Status	Sufficient

Description

Introducing the DMN2300UFB4-7B MOSFET by Diodes Incorporated

The DMN2300UFB4-7B is a high-performance, N-Channel enhancement mode Field Effect Transistor (FET) designed by the renowned semiconductor manufacturer Diodes Incorporated. This compact and efficient MOSFET is a crucial component for modern electronic circuits, offering low on-resistance and high switching speeds, making it an ideal choice for power management applications.

Key Features

Low On-Resistance: The DMN2300UFB4-7B boasts an impressively low on-resistance, which translates to reduced power losses during operation and enhances overall energy efficiency.
High-Speed Switching: With its capability for high-speed switching, this MOSFET is suitable for high-frequency applications, ensuring minimal delay and high performance in circuits that require rapid switching.
Surface-Mount Package: Housed in a compact DFN2020-6 (Type B) surface-mount package, the DMN2300UFB4-7B is designed for space-saving PCB designs, offering a small footprint without compromising on power and functionality.
Low Threshold Voltage: The device features a low threshold voltage, making it easy to drive and suitable for low-voltage applications, which is particularly important in battery-operated devices where power conservation is critical.

Applications

The DMN2300UFB4-7B is versatile and can be used in a wide range of applications, including:

Power Management Circuits
DC-DC Converters
Battery Management Systems
Load Switches
Portable Electronic Devices
High-Speed Switching Circuits

Reliability and Quality

Diodes Incorporated is known for its commitment to quality and reliability. The DMN2300UFB4-7B is manufactured to meet the highest industry standards, ensuring stable performance and longevity in a range of environmental conditions. Users can trust this MOSFET to deliver consistent results in their electronic projects.

Whether you're designing power-efficient portable devices or robust power management systems, the DMN2300UFB4-7B from Diodes Incorporated is a reliable and efficient choice that offers both performance and miniaturization to meet the demands of modern electronic applications.