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DMN2300UFB4-7B

Part No DMN2300UFB4-7B
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 1.3A 3DFN
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 1.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Gate-Source Threshold Voltage 950mV @ 250μA
Max Gate Charge 1.6nC @ 4.5V
Max Input Capacitance 64.3pF @ 25V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 500mW (Ta)
Maximum Rds On at Id,Vgs 175 mOhm @ 300mA, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package X2-DFN1006-3
Dimension 3-XFDFN
Win Source Part Number 1033734-DMN2300UFB4-7B
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian DMN2300UFB4-7B CAD Model

Description

Introducing the DMN2300UFB4-7B MOSFET by Diodes Incorporated

The DMN2300UFB4-7B is a high-performance, N-Channel enhancement mode Field Effect Transistor (FET) designed by the renowned semiconductor manufacturer Diodes Incorporated. This compact and efficient MOSFET is a crucial component for modern electronic circuits, offering low on-resistance and high switching speeds, making it an ideal choice for power management applications.

Key Features

  • Low On-Resistance: The DMN2300UFB4-7B boasts an impressively low on-resistance, which translates to reduced power losses during operation and enhances overall energy efficiency.
  • High-Speed Switching: With its capability for high-speed switching, this MOSFET is suitable for high-frequency applications, ensuring minimal delay and high performance in circuits that require rapid switching.
  • Surface-Mount Package: Housed in a compact DFN2020-6 (Type B) surface-mount package, the DMN2300UFB4-7B is designed for space-saving PCB designs, offering a small footprint without compromising on power and functionality.
  • Low Threshold Voltage: The device features a low threshold voltage, making it easy to drive and suitable for low-voltage applications, which is particularly important in battery-operated devices where power conservation is critical.

Applications

The DMN2300UFB4-7B is versatile and can be used in a wide range of applications, including:

  • Power Management Circuits
  • DC-DC Converters
  • Battery Management Systems
  • Load Switches
  • Portable Electronic Devices
  • High-Speed Switching Circuits

Reliability and Quality

Diodes Incorporated is known for its commitment to quality and reliability. The DMN2300UFB4-7B is manufactured to meet the highest industry standards, ensuring stable performance and longevity in a range of environmental conditions. Users can trust this MOSFET to deliver consistent results in their electronic projects.

Whether you're designing power-efficient portable devices or robust power management systems, the DMN2300UFB4-7B from Diodes Incorporated is a reliable and efficient choice that offers both performance and miniaturization to meet the demands of modern electronic applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
955+ $0.0524 $50.0420
2,330+ $0.0430 $100.1900
3,600+ $0.0417 $150.1200
4,965+ $0.0403 $200.0895
6,415+ $0.0390 $250.1850
8,575+ $0.0350 $300.1250
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 28,000 pieces
MOQ: 955 pcs
Order Increment : 1 pcs
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