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DMN3008SFGQ-13

Part No DMN3008SFGQ-13
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V PWRDI3333
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Estimated Pruduction Lead Time 47 Weeks
Features N-Channel 30 V 17.6A (Ta), 62A (Tc) 900mW (Ta) Surface Mount PowerDI3333-8
Manufacturer Diodes Incorporated
Series Automotive, AEC-Q101
Package Reel - TR
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Surface Mount
Package 8-PowerVDFN
Case / Package PowerDI3333-8
Family Name DMN3008
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Quantity per package 3000
Popularity Medium
Supply and Demand Status Limited
Win Source Part Number 868976-DMN3008SFGQ-13
Ultra Librarian 3D Model Ultra Librarian DMN3008SFGQ-13 CAD Model

Description

Overview of DMN3008SFGQ-13

The DMN3008SFGQ-13 is a high-performance, N-channel enhancement mode Field Effect Transistor (FET) produced by Diodes Incorporated, a leading manufacturer in the semiconductor market. This MOSFET is designed for use in a wide range of electronic applications, particularly where high efficiency, low on-resistance, and minimal power dissipation are required.

Key Features

  • Low On-Resistance: The DMN3008SFGQ-13 boasts an extremely low on-resistance (RDS(on)), which translates to reduced conduction losses and improved overall efficiency in electronic circuits.
  • High Continuous Drain Current: This device is capable of supporting a high continuous drain current (ID), making it suitable for high-power applications.
  • PowerDI®5060-8 Package: The MOSFET comes in a compact PowerDI®5060-8 package, which is optimized for thermal performance and space-saving on PCBs.
  • Lead-Free and RoHS Compliant: In line with modern environmental standards, the DMN3008SFGQ-13 is lead-free and RoHS compliant, minimizing the environmental impact of electronic waste.

Applications

The DMN3008SFGQ-13 is versatile and can be used in a variety of applications, including:

  • Power Management Solutions
  • DC-DC Converters
  • Load Switches
  • Battery Management Systems
  • Motor Drives
  • Computing and Storage Platforms

Electrical Characteristics

The DMN3008SFGQ-13 features a threshold voltage (VGS(th)) that ensures it can be driven by low-voltage logic signals, making it compatible with modern microcontrollers and digital systems. Its fast switching speed aids in achieving high-efficiency power conversion in switching applications.

Quality and Reliability

Diodes Incorporated is known for its commitment to quality and reliability. The DMN3008SFGQ-13 is no exception, undergoing rigorous testing to ensure it meets the high standards expected by the industry. Customers can trust in the consistent performance and durability of this MOSFET for their critical applications.

Whether you are designing a new power supply, optimizing a motor control circuit, or updating a battery management system, the DMN3008SFGQ-13 from Diodes Incorporated offers the performance and reliability needed to succeed in today's demanding electronic environments.

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