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DMN3016LSS-13

Part No DMN3016LSS-13
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 10.3A 8SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 10.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 25.1nC @ 10V
Max Input Capacitance 1415pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.5W (Ta)
Maximum Rds On at Id,Vgs 12 mOhm @ 12A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 1033744-DMN3016LSS-13
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian DMN3016LSS-13 CAD Model

Description

The DMN3016LSS-13 is a high-performance, N-Channel MOSFET brought to you by Diodes Incorporated, a leading manufacturer in the semiconductor market. This MOSFET is designed to offer efficient power management and is suitable for a wide range of applications, including power supplies, motor drives, and other power-intensive applications.

Key Features

  • Low On-Resistance: The DMN3016LSS-13 boasts a low on-resistance, which ensures minimal power loss and heat generation during operation, contributing to higher efficiency and reliability.
  • High Continuous Drain Current: It supports a high continuous drain current (ID), making it capable of handling high current applications with ease.
  • Power Dissipation: This MOSFET is designed to handle significant power levels with a high maximum power dissipation, ensuring stable performance under a variety of conditions.
  • Advanced Technology: Utilizing the latest advancements in semiconductor technology, the DMN3016LSS-13 provides improved performance characteristics compared to traditional MOSFETs.
  • RoHS Compliant: Complying with the Restriction of Hazardous Substances (RoHS) directive, this product is free from harmful substances, making it environmentally friendly and safe for use in a wide range of consumer electronics.

Applications

The versatility of the DMN3016LSS-13 allows it to be integrated into various applications, including:

  • DC/DC Converters
  • Power Management Systems
  • Battery Powered Devices
  • Motor Control Circuits
  • Load/Power Switching

Technical Specifications

Parameter Value
Drain-Source Voltage (VDS) 30V
Continuous Drain Current (ID) 50A
Power Dissipation (PD) 3.8W
On-Resistance (RDS(on)) 8.5 mΩ
Package SO-8

In conclusion, the DMN3016LSS-13 from Diodes Incorporated is a highly efficient, robust, and reliable solution for a variety of power management tasks. Its cutting-edge technology and compliance with environmental standards make it a smart choice for designers and engineers looking to enhance the performance of their electronic devices.

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.1730 $52.7850
105+ $0.9625 $101.0625
165+ $0.9324 $153.8460
225+ $0.9023 $203.0175
290+ $0.8722 $252.9380
385+ $0.7820 $301.0700
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,779 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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