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DMN3050S-7

Part No DMN3050S-7
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 5.2A SOT-23
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 5.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Input Capacitance 390pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.4W (Ta)
Maximum Rds On at Id,Vgs 35 mOhm @ 5.2A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 1033755-DMN3050S-7
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Power Management, Consumer Electronics
Ultra Librarian 3D Model Ultra Librarian DMN3050S-7 CAD Model

Description

DMN3050S-7 N-Channel Enhancement Mode Field Effect Transistor by Diodes Incorporated

The DMN3050S-7 is a high-performance, N-Channel Enhancement Mode Field Effect Transistor (MOSFET) designed and manufactured by Diodes Incorporated, a leading global provider of discrete, logic, analog, and mixed-signal semiconductors. This MOSFET is part of Diodes Incorporated's extensive portfolio, tailored to deliver energy-efficient power management and precise control to a diverse range of electronic applications.

Constructed with advanced trench technology, the DMN3050S-7 offers a compact, surface-mount package in the form of the SOT-23, which is known for its small footprint and suitability for high-density circuit designs. It operates with a drain-source voltage (VDS) of 30V, which provides a balanced performance for a variety of low-voltage applications. The continuous drain current (ID) is rated at 7.3A, making it capable of handling moderate power requirements efficiently.

The DMN3050S-7 is characterized by its low threshold voltage (VGS(th)) and low gate charge (Qg), which enhance its performance by minimizing conduction and switching losses, thus improving overall system efficiency. This feature is particularly beneficial in power-sensitive applications such as portable electronics, where extending battery life is crucial.

One of the key benefits of this MOSFET is its low on-resistance (RDS(on)), which typically stands at 35mΩ at VGS = 10V. This low RDS(on) translates into reduced power dissipation and heat generation, allowing for more reliable operation and potentially reducing the need for additional heat sinking in certain applications.

With its fast switching capabilities and robust thermal performance, the DMN3050S-7 is an ideal choice for a wide range of applications, including power management circuits, DC-DC converters, load switches, and motor control circuits. Its high efficiency and reliability make it well-suited for both industrial and consumer electronics that demand high-quality power control.

Diodes Incorporated's commitment to quality ensures that the DMN3050S-7 MOSFET meets stringent standards, providing designers with a dependable component that enhances the performance and longevity of their electronic products.

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