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DMN4035L-7

Part No DMN4035L-7
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 4.6A SOT23
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Estimated Pruduction Lead Time 51 Weeks
Features N-Channel 40 V 4.6A (Ta) 720mW Surface Mount SOT-23-3
Manufacturer Diodes Incorporated
Package Reel - TR
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Surface Mount
Package TO-236-3, SC-59, SOT-23-3
Case / Package SOT-23-3
Family Name DMN4035
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Quantity per package 3000
Popularity Medium
Supply and Demand Status Limited
Win Source Part Number 869007-DMN4035L-7
Ultra Librarian 3D Model Ultra Librarian DMN4035L-7 CAD Model

Description

DMN4035L-7 Power MOSFET by Diodes Incorporated

The DMN4035L-7 is a robust N-channel enhancement mode Field Effect Transistor (FET) designed and manufactured by Diodes Incorporated, a leading global manufacturer and supplier of high-quality application-specific standard products within the broad discrete, logic, and analog semiconductor markets. This power MOSFET is a testament to Diodes Incorporated's commitment to providing energy-efficient and compact solutions for a wide range of electronic applications.

Constructed with advanced trench technology, the DMN4035L-7 offers superior performance in terms of on-resistance and switching performance. This makes it an ideal choice for power management tasks in a variety of electronic devices, including but not limited to, power supplies, DC-DC converters, and load switches. The device is encapsulated in a small and thermally efficient SOT-23 package, which ensures minimal space usage on the PCB while still providing excellent thermal performance.

The DMN4035L-7 boasts a maximum continuous drain current (I<sub>D) of 4.2A at 25°C, which ensures it can handle significant power without overheating. The maximum drain-source voltage (V<sub>DSS) of 30V allows it to be used in medium voltage applications. Additionally, the low threshold voltage (V<sub>GS(th)) makes the device easy to drive at lower gate voltages, enhancing its suitability for low-voltage applications.

Key features of the DMN4035L-7 include:

  • Low on-resistance (R<sub>DS(on))
  • High-speed switching capabilities
  • Low gate charge (Q<sub>G), which contributes to reduced switching losses
  • High maximum pulsed drain current (I<sub>DM)
  • RoHS compliant, reflecting Diodes Incorporated's dedication to environmental responsibility

With its combination of efficiency, reliability, and compactness, the DMN4035L-7 is a versatile component that can be deployed across a spectrum of applications. Whether it's for consumer electronics, industrial systems, or automotive circuits, this power MOSFET from Diodes Incorporated is engineered to deliver optimal performance with long-term reliability.

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Pricing & Ordering

Quantity Unit Price Ext. Price
350+ $0.1603 $56.1050
855+ $0.1316 $112.5180
1,320+ $0.1275 $168.3000
1,820+ $0.1233 $224.4060
2,350+ $0.1193 $280.3550
3,145+ $0.1068 $335.8860
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 15,000 pieces
MOQ: 350 pcs
Order Increment : 1 pcs
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