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DMN4035LQ-7

Part No DMN4035LQ-7
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 4.6A SOT23 / N-Channel 40 V 4.6A (Ta) 720mW Surface Mount SOT-23-3
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Rohs State rohs
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Diodes Incorporated
Series Automotive, AEC-Q101
Package Tape & Reel (TR)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 4.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 42mOhm @ 4.3A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12.5 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 574 pF @ 20 V
Power Dissipation (Max) 720mW
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package SOT-23-3
Package / Case TO-236-3, SC-59, SOT-23-3
Base Product Number DMN4035
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Other Names DMN4035LQ-7DI
Standard Package 3,000
Win Source Part Number 1055771-DMN4035LQ-7
Ultra Librarian 3D Model Ultra Librarian DMN4035LQ-7 CAD Model

Description

Overview of Diodes Incorporated DMN4035LQ-7 MOSFET

The DMN4035LQ-7 is a high-performance, N-Channel enhancement mode Field Effect Transistor (FET) from Diodes Incorporated, designed to deliver efficient power control and switching operations in a wide range of applications. This MOSFET is part of Diodes Incorporated's extensive portfolio of semiconductor products, known for their reliability and innovative technology.

Key Features

  • Low On-Resistance: The DMN4035LQ-7 features a low on-resistance (RDS(on)), which minimizes conduction losses and enhances the overall efficiency of the device.
  • High Continuous Drain Current: It is capable of supporting a high continuous drain current (ID), making it suitable for high-power applications.
  • High Threshold Voltage: With a high threshold voltage (VGS(th)), this MOSFET ensures a robust performance against false turn-ons and provides stable operation.
  • Fast Switching Speed: The device's fast switching capabilities enable it to handle high-speed operations, which is crucial for power conversion and management applications.
  • Low Gate Charge: The low gate charge (Qg) of the DMN4035LQ-7 reduces the power required to control the gate, thus saving energy and improving total system efficiency.
  • Small Package Size: Housed in a compact SOT-23 package, the DMN4035LQ-7 is ideal for space-constrained applications.

Applications

The DMN4035LQ-7 MOSFET is versatile and can be used in a variety of applications, including:

  • Power Management Circuits
  • DC-DC Converters
  • Load Switches
  • Battery Management Systems
  • Motor Drives
  • Computing and Storage Platforms

Product Specifications

This MOSFET operates over a wide temperature range and meets stringent industrial standards. Below are some of the product's key specifications:

  • Drain-Source Voltage (VDS): 30V
  • Continuous Drain Current (ID): 6.5A
  • Power Dissipation (PD): 1.25W
  • Operating Temperature Range: -55°C to +150°C

With its robust design and high-performance characteristics, the DMN4035LQ-7 from Diodes Incorporated is an excellent choice for designers looking to improve the efficiency and reliability of their power management systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
205+ $0.2493 $51.1065
490+ $0.2046 $100.2540
760+ $0.1982 $150.6320
1,045+ $0.1918 $200.4310
1,350+ $0.1854 $250.2900
1,810+ $0.1662 $300.8220
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 129,000 pieces
MOQ: 205 pcs
Order Increment : 1 pcs
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