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DMN6069SFG-7

Part No DMN6069SFG-7
Manufacturer Diodes Incorporated
Catalog FETs - Single
Description MOSFET N-CH 60V 5.6A POWERDI333 / 60V N-CHANNEL ENHANCEMENT MODE MOSFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer Diodes Incorporated
Packaging Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) at 25°C 5.6A , 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Maximum) at Id, Vgs 50mOhm at 4.5A, 10V
Vgs(th) (Maximum) at Id 3V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 25nC at 10V
Maximum Vgs ±20V
Input Capacitance (Ciss) (Maximum) at Vds 1480pF at 30V
Power Dissipation (Maximum) 930mW
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package PowerDI3333-8
Manufacturer Package 8-PowerVDFN
Manufacturer Pack Quantity 2,000
MSL Level 1 (Unlimited)
Popularity High
Supply and Demand Status Sufficient
Win Source Part Number 801134-DMN6069SFG-7
Ultra Librarian 3D Model Ultra Librarian DMN6069SFG-7 CAD Model

Description

Product Overview: DMN6069SFG-7

The DMN6069SFG-7 is a high-performance N-Channel enhancement mode Field Effect Transistor (FET) designed and manufactured by Diodes Incorporated, a leading company in the semiconductor market. This MOSFET is part of Diodes Incorporated's extensive range of discrete, logic, analog, and mixed-signal components, which are known for their reliability and efficiency.

Key Features

  • Low On-Resistance: The DMN6069SFG-7 boasts a low on-resistance (R<sub>DS(on)), which enhances its efficiency by minimizing power loss during operation.
  • High Continuous Drain Current: It supports a high continuous drain current (I<sub>D), allowing it to handle significant power levels, making it suitable for a wide range of power applications.
  • High-Speed Switching: The device is optimized for fast switching speeds, which is essential for applications requiring high-frequency operation.
  • Low Threshold Voltage: A low gate threshold voltage (V<sub>GS(th)) ensures that the MOSFET can be easily driven at lower voltages, making it compatible with low-voltage control circuits.

Applications

The DMN6069SFG-7 is designed for a variety of applications that require high efficiency and power density. It is commonly used in:

  • Power management systems
  • DC-DC converters
  • Load switches
  • Battery management circuits
  • Motor control circuits

Package and Quality

Encased in a compact SOT-23F package, the DMN6069SFG-7 is designed to offer a space-saving solution without compromising performance. This package is widely used across the industry and is known for its excellent thermal and electrical characteristics.

Diodes Incorporated is committed to delivering high-quality products. The DMN6069SFG-7 is subjected to rigorous testing and quality control measures to ensure that it meets the industry standards for performance and reliability. Customers can trust that this MOSFET will deliver consistent performance across various conditions.

Whether for industrial, commercial, or consumer electronics, the DMN6069SFG-7 from Diodes Incorporated is an excellent choice for designers looking to enhance the efficiency and reliability of their power management systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
225+ $0.2257 $50.7825
540+ $0.1852 $100.0080
840+ $0.1794 $150.6960
1,155+ $0.1736 $200.5080
1,490+ $0.1679 $250.1710
1,995+ $0.1505 $300.2475
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,543 pieces
MOQ: 225 pcs
Order Increment : 1 pcs
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