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DMNH6008SPS-13

Part No DMNH6008SPS-13
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 16.5A PWRDI5060  /  N-Channel 60 V 16.5A (Ta), 88A (Tc) 3.3W (Ta) Surface Mount PowerDI5060-8
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Diodes Incorporated
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 16.5A (Ta), 88A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 40.1 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2597 pF @ 30 V
Power Dissipation (Max) 3.3W (Ta)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PowerDI5060-8
Package / Case 8-PowerTDFN
Base Product Number DMNH6008
MSL Level 1 (Unlimited)
REACH Status REACH Affected
ECCN EAR99
HTSUS 8541.29.0095
Other Names DMNH6008SPS-13DICT,DMNH6008SPS-13DIDKR,DMNH6008SPS-13DITR
Standard Package 2,500
Win Source Part Number 1055782-DMNH6008SPS-13
Ultra Librarian 3D Model Ultra Librarian DMNH6008SPS-13 CAD Model

Description

Product Overview: DMNH6008SPS-13 by Diodes Incorporated

The DMNH6008SPS-13 is a high-performance, N-Channel enhancement mode MOSFET from Diodes Incorporated, engineered to deliver efficiency and power management in a wide array of applications. This device is designed to meet the rigorous demands of modern electronic circuits, providing a compact and energy-efficient solution for switching and amplification needs.

Key Features

  • Low On-Resistance: The DMNH6008SPS-13 boasts a low on-resistance, which translates to reduced power loss during operation and enhances overall system efficiency.
  • High-Speed Switching: With its ability to switch on and off rapidly, this MOSFET is ideal for high-frequency applications, ensuring minimal switching losses and better performance in power conversion systems.
  • PowerDI®5060-8 Package: Encased in the proprietary PowerDI®5060-8 package, the DMNH6008SPS-13 offers a compact footprint while providing excellent thermal performance, making it suitable for space-constrained applications.
  • Robust Thermal Characteristics: The device is designed to handle high temperatures, ensuring reliability and long-term stability even under strenuous conditions.
  • Lead-Free and RoHS Compliant: In alignment with environmental standards, this MOSFET is lead-free and complies with the RoHS directive, making it a responsible choice for eco-friendly electronics design.

Applications

The DMNH6008SPS-13 is versatile and can be used in a variety of applications, such as:

  • DC-DC Converters
  • Power Supply Circuits
  • Motor Drives
  • Battery Management Systems
  • Load Switches
  • Point of Load (POL) Modules

Technical Specifications

Below are some of the technical specifications of the DMNH6008SPS-13:

  • Drain-Source Voltage (V<sub>DS): 60V
  • Continuous Drain Current (I<sub>D): 30A
  • Power Dissipation (P<sub>D): 88W
  • Gate-Source Voltage (V<sub>GS): ±20V
  • Operating and Storage Temperature Range: -55°C to +150°C

With its exceptional blend of power efficiency, high-speed operation, and thermal resilience, the DMNH6008SPS-13 MOSFET from Diodes Incorporated stands out as a superior choice for designers and engineers looking to optimize their power management solutions.

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