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DMP1022UFDE-7

Part No DMP1022UFDE-7
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET P-CH 12V 9.1A 6-Pin UDFN EP T/R / MOSFET P-CH 12V 9.1A 6UDFN
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 12V
Continuous Drain Current at 25°C 9.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.2V, 4.5V
Gate-Source Threshold Voltage 800mV @ 250μA
Max Gate Charge 42.6nC @ 5V
Max Input Capacitance 2953pF @ 4V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 660mW (Ta)
Maximum Rds On at Id,Vgs 16 mOhm @ 8.2A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package U-DFN2020-6 (Type E)
Dimension 6-UDFN Exposed Pad
Win Source Part Number 014464-DMP1022UFDE-7
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Family Name DMP1022UFDE
Introduction Date December 15, 2011
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian DMP1022UFDE-7 CAD Model

Description

DMP1022UFDE-7 - P-Channel Enhancement Mode Field Effect Transistor from Diodes Incorporated

The DMP1022UFDE-7 is a high-performance, P-Channel enhancement mode MOSFET designed and manufactured by Diodes Incorporated, a leading company in the semiconductor market. This device is engineered to deliver efficient power control and switching functionalities in a wide range of electronic applications.

Constructed with the latest technology, the DMP1022UFDE-7 offers a compact form factor with its space-saving PowerDI®3333-8 package. This ensures a minimal footprint on the PCB without compromising on power and performance. The device is characterized by a drain-source voltage (V<sub>DS) of -12V and a continuous drain current (I<sub>D) of -8.3A at a temperature of 25°C, which denotes its capability to handle significant power levels for its size.

One of the standout features of the DMP1022UFDE-7 is its low on-resistance (R<sub>DS(on)). With a typical R<sub>DS(on) value of just 24mΩ at V<sub>GS = -4.5V, this MOSFET ensures high efficiency and reduced power losses during operation, which is crucial for energy-sensitive designs. Additionally, the device flaunts a low gate charge (Q<sub>G), which translates to faster switching speeds, further enhancing the overall performance of the applications it is used in.

The DMP1022UFDE-7 is also characterized by its robustness, featuring a maximum power dissipation of 1.4W, which allows it to sustain reliable operation under varying conditions. It is designed to meet the rigorous demands of modern electronic circuits, offering protection against overcurrent and thermal overload, which is essential for maintaining the longevity and reliability of both the MOSFET and the system it is part of.

This MOSFET is suitable for a diverse range of applications, including load switching, power management, and other situations where efficient P-Channel MOSFETs are required. Its RoHS compliance ensures that it meets current environmental standards, making it a suitable choice for eco-friendly and sustainable designs.

In summary, the DMP1022UFDE-7 from Diodes Incorporated is a versatile and efficient solution for designers looking to optimize their power management systems with a reliable, high-performance P-Channel MOSFET.

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Pricing & Ordering

Quantity Unit Price Ext. Price
245+ $0.2063 $50.5435
595+ $0.1693 $100.7335
915+ $0.1640 $150.0600
1,265+ $0.1587 $200.7555
1,630+ $0.1534 $250.0420
2,185+ $0.1375 $300.4375
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,000 pieces
MOQ: 245 pcs
Order Increment : 1 pcs
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