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DMP2123L-7

Part No DMP2123L-7
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 3A SOT23-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 1.25V @ 250μA
Max Gate Charge 7.3nC @ 4.5V
Max Input Capacitance 443pF @ 16V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 1.4W (Ta)
Maximum Rds On at Id,Vgs 72 mOhm @ 3.5A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 014482-DMP2123L-7
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian DMP2123L-7 CAD Model

Description

Introducing the DMP2123L-7 P-Channel MOSFET by Diodes Incorporated

The DMP2123L-7 is a high-performance P-Channel enhancement mode Field-Effect Transistor (FET) designed by the renowned semiconductor manufacturer, Diodes Incorporated. This compact and efficient MOSFET is part of Diodes Incorporated's extensive range of power management devices, engineered to meet the stringent requirements of modern electronic applications.

The DMP2123L-7 is encapsulated within a small surface-mount package, specifically the SOT-23, which is known for its minimal footprint on PCBs. This makes the device an ideal choice for space-constrained applications where efficient power handling and thermal management are crucial.

Featuring a drain-source voltage (VDS) of -20V and a continuous drain current (ID) of -3.3A at a temperature of 25°C, the DMP2123L-7 is capable of handling moderate power levels while maintaining a low on-resistance. This low on-resistance, specified at -4.5V gate drive, ensures reduced power losses and improved overall efficiency, making this MOSFET suitable for a variety of power switching applications.

The device boasts a fast switching speed, which is a critical feature for applications such as load switching, power management, and DC-DC conversion in portable devices. Additionally, the DMP2123L-7 is characterized by its low threshold voltage, which enables operation at lower gate voltages, thus enhancing its compatibility with low-voltage drive signals and logic levels.

Diodes Incorporated has designed the DMP2123L-7 with reliability in mind. It features built-in ESD protection, which safeguards the device against electrostatic discharges, ensuring a robust performance even in environments where ESD events are a concern. The MOSFET also complies with RoHS standards, reflecting Diodes Incorporated's commitment to environmental sustainability.

In summary, the DMP2123L-7 P-Channel MOSFET from Diodes Incorporated is a versatile and reliable component that offers a blend of compactness, efficiency, and high performance. It is an excellent choice for designers looking to optimize power management in their next-generation electronic devices.

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Pricing & Ordering

Quantity Unit Price Ext. Price
495+ $0.1014 $50.1930
1,205+ $0.0832 $100.2560
1,865+ $0.0806 $150.3190
2,565+ $0.0780 $200.0700
3,320+ $0.0754 $250.3280
4,440+ $0.0676 $300.1440
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 48,000 pieces
MOQ: 495 pcs
Order Increment : 1 pcs
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