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DMT10H072LFDF-7

Part No DMT10H072LFDF-7
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 4A 6UDFN
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Diodes Incorporated
Series -
Package Tape & Reel
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 62mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 5.1 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 266 pF @ 50 V
FET Feature -
Power Dissipation (Max) 800mW (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package U-DFN2020-6 (Type F)
Package / Case 6-UDFN Exposed Pad
Base Product Number DMT10
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 1376904-DMT10H072LFDF-7
Ultra Librarian 3D Model Ultra Librarian DMT10H072LFDF-7 CAD Model

Description

Introducing the DMT10H072LFDF-7 Power MOSFET from Diodes Incorporated

The DMT10H072LFDF-7 is a cutting-edge power MOSFET brought to you by Diodes Incorporated, a leading manufacturer and supplier of high-quality semiconductor products. This device is designed to offer efficient power management and is optimized for a wide range of applications, ensuring both reliability and performance.

Constructed with the latest trench MOSFET technology, the DMT10H072LFDF-7 provides excellent RDS(on) and gate charge performance, which translates to reduced conduction and switching losses. This makes it an ideal choice for high-efficiency power supplies, DC-DC converters, and power management tasks in consumer electronics, computing, and industrial devices.

Key Features of the DMT10H072LFDF-7:

  • Low On-Resistance (RDS(on)): Minimized conduction losses are achieved thanks to the device's low on-resistance, ensuring higher efficiency in electronic circuits.
  • High Continuous Drain Current (ID): The MOSFET can handle a substantial continuous drain current, making it suitable for applications that require high current handling capabilities.
  • Fast Switching Speed: With its rapid switching capabilities, the DMT10H072LFDF-7 is perfect for high-frequency applications, contributing to the overall reduction of energy consumption.
  • PowerDI®5x6 Package: Enclosed in a compact PowerDI®5x6 package, the device offers a space-saving solution without compromising on power handling or thermal performance.
  • Lead-Free and RoHS Compliant: This product is environmentally friendly, adhering to the RoHS directive, which limits the use of certain hazardous substances in electrical and electronic equipment.

With its robust thermal performance, the DMT10H072LFDF-7 is also characterized by its ability to operate reliably over a wide temperature range. This ensures stability and longevity even under challenging environmental conditions.

The DMT10H072LFDF-7 from Diodes Incorporated stands out as a superior choice for designers looking to enhance the efficiency and performance of their power management systems. Its state-of-the-art construction and adherence to stringent quality standards make it a valuable component in any advanced electronic application.

For more information or to request a sample, visit the Diodes Incorporated website or contact your local sales representative.

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Pricing & Ordering

Quantity Unit Price Ext. Price
205+ $0.2458 $50.3890
435+ $0.2302 $100.1370
675+ $0.2225 $150.1875
970+ $0.2069 $200.6930
1,260+ $0.1991 $250.8660
1,570+ $0.1914 $300.4980
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,000 pieces
MOQ: 205 pcs
Order Increment : 1 pcs
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