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DMTH10H030LK3-13

Part No DMTH10H030LK3-13
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 28A TO252 / N-Channel 100 V 28A (Tc) 2.1W (Ta) Surface Mount TO-252-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Manufacturer Diodes Incorporated
Packaging Reel - TR
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 28A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 30mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 33.3 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1871 pF @ 50 V
Power Dissipation (Max) 2.1W
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Surface Mount
Supplier Device Package TO-252-3
Case / Package TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number DMTH10
RoHS Status ROHS3 Compliant
MSL Level 1 (Unlimited)
REACH Status REACH Affected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 2,500
Win Source Part Number 1323899-DMTH10H030LK3-13
Ultra Librarian 3D Model Ultra Librarian DMTH10H030LK3-13 CAD Model

Description

DMTH10H030LK3-13 Power MOSFET by Diodes Incorporated

The DMTH10H030LK3-13 is a high-performance, N-channel power MOSFET designed and manufactured by Diodes Incorporated, a leading global provider of discrete, logic, analog, and mixed-signal semiconductors. This MOSFET is engineered to deliver efficient power management and control in a wide range of applications, including power supplies, motor drives, lighting, and other power-intensive electronics.

Key Features:

  • Low On-Resistance (R<sub>DS(on)): The device boasts a very low on-resistance, which results in minimal conduction losses and improved overall efficiency in applications.
  • High Continuous Drain Current (I<sub>D): With the ability to handle a high continuous drain current, the DMTH10H030LK3-13 is suitable for high-power applications.
  • High-Speed Switching: The MOSFET features fast switching speeds, which is crucial for reducing switching losses and improving the performance of power conversion systems.
  • High Threshold Voltage (V<sub>TH): The device has a high threshold voltage that ensures a reliable operation by preventing unintentional turn-on due to noise or fluctuating signals.
  • Low Gate Charge (Q<sub>G): A low gate charge enables efficient switching performance and reduces the power required to drive the MOSFET, thus saving energy.
  • Robust Body Diode: The DMTH10H030LK3-13 comes with a robust body diode that can handle high surge currents and is suitable for hard-switching applications.

Applications:

The versatility of the DMTH10H030LK3-13 makes it an excellent choice for a variety of applications, including:

  • DC/DC Converters
  • AC/DC Power Supplies
  • Motor Control Systems
  • LED Lighting
  • Automotive Electronics
  • Power Management Circuits

Package and Quality:

The DMTH10H030LK3-13 is offered in a compact and thermally efficient PowerDI3333-8 package, which ensures a small footprint on the PCB while providing excellent heat dissipation. Diodes Incorporated is committed to high standards of quality and reliability, and this product is designed to meet or exceed industry standards for performance and durability.

For detailed specifications, application notes, and additional resources, customers are encouraged to visit the Diodes Incorporated website or contact their sales representatives for further assistance.

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