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DMTH6010LPSQ-13

Part No DMTH6010LPSQ-13
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 13.5A PWRDI5060 / N-Channel 60 V 13.5A (Ta), 100A (Tc) 2.6W (Ta), 136W (Tc) Surface Mount PowerDI5060-8
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Manufacturer Diodes Incorporated
Packaging Reel - TR
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 13.5A, 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 41.3 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2090 pF @ 30 V
Power Dissipation (Max) 2.6W, 136W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Surface Mount
Supplier Device Package PowerDI5060-8
Case / Package 8-PowerTDFN
Base Product Number DMTH6010
RoHS Status ROHS3 Compliant
MSL Level 1 (Unlimited)
REACH Status REACH Affected
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number DMTH6010LPSQ-13DIDKR,DMTH6010LPSQ-13DITR,DMTH6010LPSQ-13DICT
Standard Package 2,500
Win Source Part Number 1325337-DMTH6010LPSQ-13
Ultra Librarian 3D Model Ultra Librarian DMTH6010LPSQ-13 CAD Model

Description

Product Overview: DMTH6010LPSQ-13

The DMTH6010LPSQ-13 is a high-performance, low-power MOSFET designed and manufactured by Diodes Incorporated, a leading global manufacturer and supplier of high-quality semiconductor products. This MOSFET is part of their extensive range of power management devices, known for their reliability and efficiency.

The DMTH6010LPSQ-13 is a surface-mount device encapsulated in a PowerDI5060-8 package, which ensures a compact footprint while offering excellent thermal performance. This product is designed to handle a continuous drain current (ID) of 60A, making it suitable for a wide array of applications that require high current capacity.

With a drain-source voltage (VDS) of 100V, this MOSFET can be used in systems that operate at higher voltages, providing the flexibility needed for various design requirements. The low on-resistance (RDS(on)) of this MOSFET minimizes conduction losses, thereby increasing the overall efficiency of the application it is used in.

The DMTH6010LPSQ-13 features fast switching capabilities, which is essential for reducing switching losses, especially in high-frequency power switching applications. This makes it an ideal choice for power supplies, DC-DC converters, motor drives, and other power-intensive applications.

Additionally, the product is designed to be robust against repetitive avalanche events, ensuring durability and long-term reliability. It also includes an integrated Schottky diode, which provides body diode reverse recovery performance improvements, further enhancing its efficiency in synchronous rectification applications.

Diodes Incorporated has ensured that the DMTH6010LPSQ-13 meets environmental standards by making it RoHS compliant. This commitment to environmental responsibility means that the product is free from hazardous substances, making it suitable for use in a wide range of consumer and industrial products without compromising on environmental safety.

In summary, the DMTH6010LPSQ-13 from Diodes Incorporated is a robust, efficient, and versatile MOSFET that delivers high performance for power management applications. Its compact size, high current handling, and energy-efficient design make it an excellent choice for designers looking to enhance the performance of their power systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.1764 $52.9380
95+ $1.1006 $104.5570
145+ $1.0626 $154.0770
205+ $0.9867 $202.2735
265+ $0.9488 $251.4320
330+ $0.9108 $300.5640
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,354 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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