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DMTH8008LFGQ-13

Part No DMTH8008LFGQ-13
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET BVDSS: 61V~100V POWERDI33 / N-Channel 80 V 17A (Ta), 70A (Tc) 1.2W (Ta), 50W (Tc) Surface Mount POWERDI3333-8
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Diodes Incorporated
Series Automotive, AEC-Q101
Package Tape & Reel
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain (Id) @ 25°C 17A (Ta), 70A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 6.9mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 37.7 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2254 pF @ 40 V
FET Feature -
Power Dissipation (Max) 1.2W (Ta), 50W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerDI3333-8
Package / Case 8-PowerVDFN
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1353497-DMTH8008LFGQ-13
Ultra Librarian 3D Model Ultra Librarian DMTH8008LFGQ-13 CAD Model

Description

Diodes Incorporated DMTH8008LFGQ-13 Product Overview

The DMTH8008LFGQ-13 is a high-performance, N-channel MOSFET from Diodes Incorporated, designed to deliver efficiency and reliability for a wide range of applications. This power MOSFET is part of Diodes Incorporated's extensive portfolio of semiconductor solutions, which are known for their quality and performance in various electronic circuits.

Key Features

  • Low On-Resistance: The device features a low on-resistance (R<sub>DS(on)), which minimizes conduction losses and enhances overall efficiency, making it ideal for power-intensive applications.
  • High Continuous Drain Current: With a high continuous drain current (I<sub>D), the DMTH8008LFGQ-13 can handle significant power without compromising performance, ensuring reliable operation under demanding conditions.
  • PowerDI™ 5060-8 Package: The MOSFET is housed in a compact PowerDI™ 5060-8 package, which offers excellent thermal performance and a small footprint, suitable for space-constrained applications.
  • Fast Switching Speed: Fast switching capabilities of this MOSFET reduce switching losses and improve the efficiency of power conversion circuits.
  • Low Threshold Voltage: A low threshold voltage ensures that the device can be easily driven at lower gate voltages, which is beneficial for low-voltage applications.

Applications

The DMTH8008LFGQ-13 is versatile and can be used in a variety of applications, including:

  • DC/DC converters
  • Power management systems
  • Motor drives and controllers
  • Computing and server power supplies
  • Telecom and networking equipment

Reliability and Performance

Diodes Incorporated's commitment to quality is evident in the DMTH8008LFGQ-13, which is designed to meet the stringent requirements of modern electronic devices. Its robust construction ensures long-term reliability, while its advanced features provide the performance needed to tackle challenging power delivery tasks. Whether used in consumer electronics or industrial systems, this MOSFET is a solid choice for designers looking for a dependable and efficient solution.

For detailed specifications and application notes, engineers and designers are encouraged to consult the official datasheet provided by Diodes Incorporated.

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Pricing & Ordering

Quantity Unit Price Ext. Price
10+ $5.2782 $52.7820
24+ $4.3309 $103.9416
36+ $4.1955 $151.0380
50+ $4.0602 $203.0100
64+ $3.9249 $251.1936
86+ $3.5188 $302.6168
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 34,810 pieces
MOQ: 10 pcs
Order Increment : 1 pcs
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