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DST857BDJ-7

Part No DST857BDJ-7
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Arrays
Description TRANS 2PNP 45V 0.1A SOT963
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Transistor Polarity 2 PNP (Dual)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 45V
Max Vce (sat) 500mV @ 5mA, 100mA
Collector Cut-off Current(Max) 15nA (ICBO)
Typical Gain (hFE) (Min) 200 @ 2mA, 5V
Maximum Power Dissipation 300mW
Frequency - Transition 340MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-963
Win Source Part Number 014934-DST857BDJ-7
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian DST857BDJ-7 CAD Model

Description

Introducing the DST857BDJ-7 – A High-Performance Transistor from Diodes Incorporated

The DST857BDJ-7 is a cutting-edge bipolar junction transistor (BJT) designed and manufactured by the renowned semiconductor company, Diodes Incorporated. This transistor is part of their extensive range of discrete, analog, and mixed-signal components that cater to a wide array of applications across various industries. The DST857BDJ-7 is specifically engineered to provide high-speed switching performance and is housed in a compact, surface-mount package that ensures ease of integration into various electronic circuits.

At the heart of the DST857BDJ-7 is its NPN transistor configuration, which allows for efficient current amplification and control. This makes it an ideal component for applications requiring quick switching and accurate signal modulation. The device is characterized by its low saturation voltage and high current gain, which are critical parameters for power management and signal processing tasks.

Key Features of the DST857BDJ-7

  • High Current Gain (hFE): This transistor offers a high current gain, ensuring effective current amplification in the circuit.
  • Low Saturation Voltage: The low V<sub>CE(sat) minimizes power loss and improves efficiency, which is crucial for battery-powered devices.
  • Fast Switching Speeds: Its rapid switching capability makes it suitable for high-frequency applications.
  • Surface-Mount Package: The SOT-523 package is designed for space-saving PCB layouts and is compatible with automated assembly processes.
  • RoHS Compliant: The DST857BDJ-7 meets RoHS standards, ensuring that it is free from hazardous substances and environmentally friendly.

The DST857BDJ-7 is versatile enough to be used in a variety of applications, including but not limited to, switching regulators, power management circuits, and signal amplification modules. Its robust design ensures reliability and longevity, even under demanding operational conditions.

Whether you're designing consumer electronics, automotive systems, or industrial machinery, the DST857BDJ-7 from Diodes Incorporated is a reliable choice that offers performance, efficiency, and compactness. Incorporate this high-quality transistor into your next project for enhanced electrical performance and operational excellence.

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Pricing & Ordering

Quantity Unit Price Ext. Price
560+ $0.0894 $50.0640
1,365+ $0.0734 $100.1910
2,110+ $0.0711 $150.0210
2,910+ $0.0688 $200.2080
3,760+ $0.0665 $250.0400
5,035+ $0.0596 $300.0860
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 90,000 pieces
MOQ: 560 pcs
Order Increment : 1 pcs
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