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DZT591C-13

Part No DZT591C-13
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Single
Description TRANS PNP 60V 1A SOT-223
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Cut Reel
Transistor Polarity PNP
Maximum Current Collector 1A
VCEO Maximum Collector-Emitter Breakdown Voltage 60V
Max Vce (sat) 600mV @ 100mA, 1A
Collector Cut-off Current(Max) 100nA
Typical Gain (hFE) (Min) 100 @ 500mA, 5V
Maximum Power Dissipation 1W
Frequency - Transition 150MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-223
Win Source Part Number 118136-DZT591C-13
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian DZT591C-13 CAD Model

Description

Introducing the DZT591C-13 NPN Transistor from Diodes Incorporated

Diodes Incorporated presents the DZT591C-13, a high-performance NPN bipolar junction transistor (BJT) designed for a wide range of applications requiring efficient amplification and switching. This versatile component is engineered to deliver consistent performance, making it an ideal choice for designers looking to enhance their electronic circuits.

Key Features:

  • Type: NPN Bipolar Junction Transistor (BJT)
  • Package: The DZT591C-13 comes in a robust SOT-223 package, providing a compact footprint while ensuring reliable thermal performance.
  • Collector-Emitter Voltage (V<sub>CEO): It offers a maximum collector-emitter voltage of 60V, catering to a broad range of voltage requirements.
  • Collector Current (I<sub>C): The device can handle continuous collector current up to 1A, making it suitable for moderate power applications.
  • DC Current Gain (h<sub>FE): It has a high DC current gain, ensuring efficient current amplification in your circuit designs.
  • Power Dissipation: With a power dissipation rating that ensures reliable operation under various conditions.
  • Operating Temperature Range: The DZT591C-13 is designed to operate within a temperature range of -55°C to +150°C, accommodating a wide range of environmental conditions.

Applications:

The DZT591C-13 transistor is suitable for a multitude of applications, including but not limited to:

  • Switching regulators
  • Power management functions
  • Motor control circuits
  • Audio amplifiers
  • Signal amplification

With its robust construction and reliable performance, the DZT591C-13 from Diodes Incorporated is an excellent choice for designers looking to create efficient, high-performance electronic systems. Its combination of high current capacity, voltage handling, and thermal performance ensures that it can meet the demands of a wide array of electronic applications.

Whether you're developing consumer electronics, industrial control systems, or automotive applications, the DZT591C-13 offers the performance and reliability that today's engineers require. Trust Diodes Incorporated to provide the components you need to take your electronic designs to the next level.

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