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Same model may have multiple batches, images only for reference.
IRFZ34NSTRRPBF Real Image
Same model may have multiple batches, images only for reference.

IRFZ34NSTRRPBF

Part No IRFZ34NSTRRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 29A D2PAK
Datasheet
IRFZ34NSTRRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 29A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 34nC @ 10V
Max Input Capacitance 700pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.8W (Ta), 68W (Tc)
Maximum Rds On at Id,Vgs 40 mOhm @ 16A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 040765-IRFZ34NSTRRPBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFZ34NSTRRPBF CAD Model

Description

The Infineon IRFZ34NSTRRPBF is an N-channel MOSFET transistor with a maximum power dissipation of 3.8W (Ta), 68W (Tc) and a drain-source breakdown voltage of 55V.

  • Continuous Drain Current: 29A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 34nC @ 10V
  • Maximum Input Capacitance: 700pF @ 25V
  • Mounting: surface-mount device (SMD)
  • Packaging: reel-TR
  • Status: not for new designs
  • Supply and demand status: limited
  • Suitable for: various applications such as power supplies, motor control, and lighting

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