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Same model may have multiple batches, images only for reference.
IPI041N12N3G Real Image
Same model may have multiple batches, images only for reference.

IPI041N12N3G

Part No IPI041N12N3G
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 120V 120A TO262-3
Datasheet
IPI041N12N3G Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 120V
Continuous Drain Current at 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 270μA
Max Gate Charge 211nC @ 10V
Max Input Capacitance 13800pF @ 60V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 300W (Tc)
Maximum Rds On at Id,Vgs 4.1 mOhm @ 100A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO262-3
Dimension TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 040639-IPI041N12N3G
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IPI041N12N3G CAD Model

Description

The Infineon Technologies 040639-IPI041N12N3G is a N-Channel MOSFET transistor which is suitable for use in various applications.

  • Manufacturer: Infineon Technologies
  • Drain-Source Breakdown Voltage: 120V
  • Continuous Drain Current @ 25°C: 120A
  • Maximum Rds On: 4.1 mOhm @ 100A, 10V
  • Gate-Source Threshold Voltage: 4V @ 270μA
  • Maximum Gate Charge: 211nC @ 10V
  • Maximum Input Capacitance: 13800pF @ 60V
  • Maximum Gate-Source Voltage: ±20V
  • Package: PG-TO262-3
  • Power Dissipation: 300W (Tc)
  • Supply and Demand Status: limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
25+ $2.3539 $58.8475
60+ $1.9312 $115.8720
93+ $1.8711 $174.0123
128+ $1.8110 $231.8080
166+ $1.7498 $290.4668
221+ $1.5696 $346.8816
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