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FMMTA56TA

Part No FMMTA56TA
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Single
Description TRANS PNP 80V 0.5A SOT23-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Transistor Polarity PNP
Maximum Current Collector 500mA
VCEO Maximum Collector-Emitter Breakdown Voltage 80V
Max Vce (sat) 250mV @ 10mA, 100mA
Collector Cut-off Current(Max) 100nA
Typical Gain (hFE) (Min) 50 @ 100mA, 1V
Maximum Power Dissipation 330mW
Frequency - Transition 100MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3
Win Source Part Number 016355-FMMTA56TA
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian FMMTA56TA CAD Model

Description

Introducing the FMMTA56TA Transistor from Diodes Incorporated

The FMMTA56TA is a high-quality PNP transistor designed and manufactured by Diodes Incorporated, a leading global provider of semiconductor products. This transistor is part of their broad portfolio of discrete, analog, and mixed-signal components tailored for various electronic applications. The FMMTA56TA is engineered to deliver reliable performance for a multitude of circuit functions in a wide array of electronic devices.

Key Features

  • Type: PNP
  • Package: SOT-23
  • Collector-Emitter Voltage (VCEO): 80V
  • Collector Current (IC): 500mA
  • Power Dissipation (Pd): 625mW
  • DC Current Gain (hFE): High
  • Transition Frequency (fT): High
  • Operating and Storage Junction Temperature Range: -55 to +150°C

The FMMTA56TA transistor is encapsulated in a compact SOT-23 package, which is ideal for space-constrained applications. It offers a collector-emitter voltage (VCEO) of 80V and a collector current (IC) of up to 500mA, making it suitable for moderate power handling requirements. The device also boasts a power dissipation (Pd) of 625mW, allowing it to withstand reasonable levels of heat during operation.

One of the notable characteristics of the FMMTA56TA is its high DC current gain (hFE), which ensures amplification efficiency in various circuit designs. Additionally, the high transition frequency (fT) of this transistor makes it an excellent choice for applications requiring fast switching and signal processing capabilities.

The operating and storage junction temperature range of the FMMTA56TA extends from -55 to +150°C, indicating its resilience and reliability across different environmental conditions. This temperature range ensures that the transistor can perform consistently in both commercial and industrial settings.

Whether you are designing power management systems, signal amplification circuits, or any other application that requires a dependable PNP transistor, the FMMTA56TA from Diodes Incorporated is an excellent choice that combines performance with long-term reliability.

For detailed specifications, application notes, and additional resources, please visit the Diodes Incorporated website or contact their support team for assistance.

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Pricing & Ordering

Quantity Unit Price Ext. Price
580+ $0.1000 $58.0000
1,410+ $0.0822 $115.9020
2,180+ $0.0796 $173.5280
3,000+ $0.0771 $231.3000
3,885+ $0.0744 $289.0440
5,195+ $0.0668 $347.0260
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,160 pieces
MOQ: 580 pcs
Order Increment : 1 pcs
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