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MMBT3906T-13

Part No MMBT3906T-13
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Single
Description TRANS PNP 40V 200MA SOT-523
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer Diodes Incorporated
Packaging Reel
Part Status Obsolete (End Of Life)
Transistor Type PNP
Current - Collector (Ic) (Maximum) 200mA
Voltage - Collector Emitter Breakdown (Maximum) 40V
Vce Saturation (Maximum) at Ib, Ic 400mV at 5mA, 50mA
Current - Collector Cutoff (Maximum) 50nA
DC Current Gain (hFE) (Min) at Ic, Vce 100 at 10mA, 1V
Power - Max 150mW
Frequency - Transition 250MHz
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Manufacturer Package SOT-523
Supplier Device Package SOT-523
Manufacturer Pack Quantity 10,000
MSL Level 1 (Unlimited)
Popularity High
Supply and Demand Status Sufficient
Win Source Part Number 800961-MMBT3906T-13
Ultra Librarian 3D Model Ultra Librarian MMBT3906T-13 CAD Model

Description

Product Overview: MMBT3906T-13

The MMBT3906T-13 from Diodes Incorporated is a high-quality PNP transistor designed for general-purpose amplifier and switching applications. This product is part of the extensive range of semiconductor components that Diodes Incorporated offers, known for their reliability and performance.

Key Features

  • Device Type: PNP Transistor
  • Configuration: Single
  • Package: SOT-23, which is a small and efficient surface-mount package, providing a compact footprint for PCB designs.
  • Collector-Emitter Voltage (Vceo): -40V, which indicates the maximum voltage the transistor can withstand when the collector and emitter are in an open circuit.
  • Collector Current (Ic): -200mA, denoting the maximum continuous current that can flow through the collector.
  • Power Dissipation (Pd): 350mW, which is the amount of power the transistor can dissipate without exceeding its maximum operating temperature.
  • DC Current Gain (hFE): 100 to 300, a measure of the transistor's amplification factor in direct current conditions.
  • Operating Temperature Range: -55°C to +150°C, ensuring stability and performance across a wide range of environmental conditions.
  • Compliance: RoHS compliant, ensuring the use of environmentally safe materials in the manufacturing process.

Applications

The MMBT3906T-13 is versatile and can be used in a variety of electronic circuits. Typical applications include, but are not limited to:

  • Signal amplification
  • Switching applications
  • Linear amplification stages
  • Power management functions
  • Consumer electronics
  • Industrial control systems

Quality and Reliability

Diodes Incorporated ensures that each MMBT3906T-13 transistor meets stringent quality standards. The devices undergo rigorous testing to guarantee optimal performance and reliability. Customers can trust Diodes Incorporated for consistent quality and dependable components for their electronic designs.

With its compact form factor, robust electrical characteristics, and compliance with environmental standards, the MMBT3906T-13 is an excellent choice for designers seeking a reliable PNP transistor for their next project.

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