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ZVNL120A

Part No ZVNL120A
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 180MA TO92-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Bulk
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 180mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 3V, 5V
Gate-Source Threshold Voltage 1.5V @ 1mA
Max Input Capacitance 85pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 700mW (Ta)
Maximum Rds On at Id,Vgs 10 Ohm @ 250mA, 5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-92-3
Dimension TO-226-3, TO-92-3 (TO-226AA)
Win Source Part Number 1120322-ZVNL120A
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian ZVNL120A CAD Model

Description

Introducing the ZVNL120A N-Channel Enhancement Mode Vertical DMOS FET from Diodes Incorporated

Diodes Incorporated presents the ZVNL120A, a high-performance N-Channel enhancement mode vertical DMOS FET designed for a variety of switching and amplification applications. This versatile transistor is a testament to Diodes Incorporated's commitment to providing industry-leading solutions for today's electronic needs.

Key Features of the ZVNL120A

  • Low On-Resistance: The ZVNL120A boasts an exceptionally low on-resistance, which translates to reduced power loss and improved efficiency in operation.
  • High-Speed Switching: With its fast switching capabilities, this MOSFET is suitable for high-speed applications, ensuring minimal delay and high performance in circuits that require rapid state changes.
  • Low Threshold Voltage: The low threshold voltage of the ZVNL120A makes it ideal for low-voltage operations, enabling it to be easily driven by logic-level voltages, which simplifies the design of interface circuits.
  • Enhancement Mode: As an enhancement-mode FET, it requires a positive gate voltage to conduct, allowing for precise control over the device's operation and making it a preferred choice for digital switching applications.
  • High Input Impedance: The high input impedance ensures minimal current draw from the preceding stage, which is beneficial for power-sensitive designs and helps to prevent loading effects on the driving circuit.

Applications

The ZVNL120A is suitable for a wide range of applications, including:

  • Power Management Circuits
  • Motor Control Systems
  • Audio Amplifiers
  • Battery Operated Devices
  • Switch Mode Power Supplies (SMPS)
  • DC-DC Converters

Reliability and Quality

Diodes Incorporated ensures that the ZVNL120A meets the highest quality and reliability standards. This component is engineered to deliver consistent performance and is backed by rigorous testing protocols to ensure it meets the demands of a wide array of industrial, commercial, and consumer electronics.

Summary

The ZVNL120A from Diodes Incorporated is a robust and reliable N-Channel enhancement mode vertical DMOS FET that offers designers flexibility and performance. Its low on-resistance, high-speed switching, and low threshold voltage make it an excellent choice for a multitude of applications that require efficient power control and management.

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Pricing & Ordering

Quantity Unit Price Ext. Price
75+ $0.6802 $51.0150
180+ $0.5581 $100.4580
280+ $0.5407 $151.3960
385+ $0.5233 $201.4705
495+ $0.5058 $250.3710
665+ $0.4535 $301.5775
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,500 pieces
MOQ: 75 pcs
Order Increment : 1 pcs
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