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Same model may have multiple batches, images only for reference.
RF1S640 Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

RF1S640

Part No RF1S640
Manufacturer Harris Corporation
Catalog Transistors - FETs, MOSFETs - RF
Description 18A, 200V, 0.180 OHM, N-CHANNEL
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Harris Corporation
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 180mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 64 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1275 pF @ 25 V
Power Dissipation (Max) 125W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package I2PAK (TO-262)
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Standard Package 1 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 293226-RF1S640
Ultra Librarian 3D Model Ultra Librarian RF1S640 CAD Model

Description

The 293226-RF1S640 is a N-Channel MOSFET transistor designed for use in discrete semiconductor products.

  • Vdss: 200V
  • Id: 18A @ 25°C
  • Rds On: 180mOhm @ 10A and 10V
  • Power Dissipation: Up to 125W
  • Package: TO-262-3 Long Leads, I²Pak, TO-262AA
  • Mounting Type: Through-hole
  • Gate Charge (Qg): 64nC @ 10V
  • Input Capacitance (Ciss): 1275pF @ 25V
  • Operating Temperature: -55°C to 150°C
  • Quality: High-quality and reliable choice

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Pricing & Ordering

Quantity Unit Price Ext. Price
5+ $13.2432 $66.2160
11+ $10.8662 $119.5282
17+ $10.5267 $178.9539
23+ $10.1871 $234.3033
30+ $9.8475 $295.4250
40+ $8.8288 $353.1520
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Availability: 2,100 pieces
MOQ: 5 pcs
Order Increment : 1 pcs
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