The ZXMC10A816N8 is a high-performance, dual N-channel enhancement mode MOSFET from Diodes Incorporated, designed for power management applications. This compact, surface-mount device offers a combination of low on-resistance and high switching speeds, making it an excellent choice for a variety of power conversion and control circuits.

Key Features

• Low On-Resistance: The ZXMC10A816N8 boasts an extremely low on-resistance, which translates to reduced conduction losses and improved efficiency in applications.
• High-Speed Switching: With its fast switching capabilities, this MOSFET is suitable for high-frequency operations, ensuring minimal switching losses and better performance in applications such as DC-DC converters.
• Dual N-Channel Configuration: The dual N-Channel design allows for flexibility in circuit design, enabling the use of half-bridge or full-bridge topologies.
• Power Dissipation: It has a power dissipation of 2.5W, which enables it to handle moderate power levels in compact designs.
• Advanced Packaging: Housed in an 8-pin SOIC package, the ZXMC10A816N8 is optimized for space-constrained applications while providing excellent thermal performance.
• Gate Threshold Voltage: A typical gate threshold voltage of 1.0V facilitates easy drive capability and simple gate drive designs.

Applications

The ZXMC10A816N8 is versatile enough to be used in a wide range of applications, including:

• DC-DC Converters
• Power Management Modules
• Motor Control Circuits
• Load Switches
• Switching Regulators

Technical Specifications

Parameter Value Drain-Source Voltage (V<sub>DS) 100V Continuous Drain Current (I<sub>D) 1.4A Power Dissipation (P<sub>D) 2.5W On-Resistance (R<sub>DS(on)) 0.8Ω Operating Temperature Range -55°C to +150°C

For engineers seeking a reliable and efficient solution for their power management needs, the ZXMC10A816N8 from Diodes Incorporated stands out as a robust option that delivers both performance and versatility.