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ZXMHC10A07T8TA

Part No ZXMHC10A07T8TA
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N/2P-CH 100V 1A/0.8A SM8
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
FET Type 2 N and 2 P-Channel (H-Bridge)
FET Feature Standard
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 1A, 800mA
Maximum Rds On at Id,Vgs 700 mOhm @ 1.5A, 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 2.9nC @ 10V
Max Input Capacitance 138pF @ 60V
Maximum Power Dissipation 1.3W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SM8
Win Source Part Number 036938-ZXMHC10A07T8TA
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian ZXMHC10A07T8TA CAD Model

Description

Product Overview: ZXMHC10A07T8TA from Diodes Incorporated

The ZXMHC10A07T8TA is a high-performance, dual N- and P-Channel MOSFET H-Bridge from Diodes Incorporated. This product is designed to offer efficient power management and switching capabilities for a wide range of applications, including motor control, power supply, and DC-DC conversion systems. Its compact form factor and integrated features make it a valuable component for designers looking to optimize their power circuitry with reliable and versatile solutions.

Key Features

  • High Integration: The device integrates two N-Channel and two P-Channel MOSFETs in an H-Bridge configuration, enabling simplified circuit design and reduced component count.
  • Low On-Resistance: It boasts a low on-resistance (R<sub>DS(ON)) which enhances overall efficiency by minimizing conduction losses.
  • High-Speed Switching: The ZXMHC10A07T8TA supports high-speed switching, which is crucial for applications requiring fast response times and high-frequency operation.
  • Thermal Management: With an excellent thermal performance, this MOSFET H-Bridge can operate reliably over a wide temperature range, ensuring consistent performance even under strenuous conditions.
  • Compact Package: Encased in a small 8-pin SOIC package, this component saves valuable board space and is suitable for space-constrained applications.

Applications

The versatility of the ZXMHC10A07T8TA makes it ideal for a variety of applications. It is particularly well-suited for brushed DC motor control, including bidirectional control for automation and robotics. It is also commonly used in power management circuits, such as synchronous buck or boost converters, and in portable electronics where power efficiency is critical. Additionally, its high-speed switching capabilities make it a solid choice for Class D audio amplifiers and other applications that require high-frequency power switching.

Quality and Reliability

Diodes Incorporated is known for their commitment to quality, and the ZXMHC10A07T8TA is no exception. It is manufactured to meet high standards for reliability and performance, ensuring that it can withstand the rigors of demanding applications. With its robust design and Diodes Incorporated's reputation, this H-Bridge MOSFET is a reliable choice for designers and engineers looking to enhance their power management systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
18+ $2.8097 $50.5746
44+ $2.3054 $101.4376
68+ $2.2333 $151.8644
93+ $2.1613 $201.0009
120+ $2.0893 $250.7160
161+ $1.8731 $301.5691
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 19,930 pieces
MOQ: 18 pcs
Order Increment : 1 pcs
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