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ZXMN10A11KTC

Part No ZXMN10A11KTC
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 2.4A DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 2.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 5.4nC @ 10V
Max Input Capacitance 274pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.11W (Ta)
Maximum Rds On at Id,Vgs 350 mOhm @ 2.6A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package TO-252-3
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 036951-ZXMN10A11KTC
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian ZXMN10A11KTC CAD Model

Description

Introducing the ZXMN10A11KTC MOSFET from Diodes Incorporated

The ZXMN10A11KTC is a high-performance, N-Channel enhancement mode Field-Effect Transistor (FET) brought to you by Diodes Incorporated, a leading manufacturer in the semiconductor market. This MOSFET is designed to deliver efficient power management and signal amplification in a wide range of electronic applications. Its compact and robust design makes it an ideal choice for space-constrained applications that require high power density and low on-resistance.

Constructed with advanced trench MOSFET technology, the ZXMN10A11KTC offers excellent on-state resistance (RDS(on)) of just 28mΩ at VGS = 10V, which significantly reduces conduction losses and enhances overall efficiency. This feature, combined with a maximum continuous drain current (ID) of 5.7A, allows for high current handling capability, making the ZXMN10A11KTC suitable for high-performance power switching applications.

The device comes in a compact SOT-23 package, which is highly favored for its small footprint. Despite its small size, it does not compromise on thermal performance, thanks to its power dissipation of up to 1.25W. This enables the ZXMN10A11KTC to operate effectively even under high-temperature conditions, ensuring reliability and longevity of the applications it is used in.

With a threshold voltage (Vth) of just 1V, the ZXMN10A11KTC ensures low gate drive requirements, which is beneficial for battery-operated devices where power conservation is critical. Additionally, its fast switching characteristics make it an excellent choice for high-speed circuitry, further expanding its versatility across various electronic segments.

Whether you're designing power supplies, DC-DC converters, motor control circuits, or any other application that demands a high-efficiency, high-density MOSFET, the ZXMN10A11KTC from Diodes Incorporated will exceed your expectations with its performance and reliability.

Choose the ZXMN10A11KTC for your next project and experience the difference in power management with a device that offers the perfect balance between size, efficiency, and thermal performance.

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Pricing & Ordering

Quantity Unit Price Ext. Price
24+ $2.0944 $50.2656
59+ $1.7185 $101.3915
91+ $1.6648 $151.4968
125+ $1.6111 $201.3875
161+ $1.5574 $250.7414
215+ $1.3963 $300.2045
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,592 pieces
MOQ: 24 pcs
Order Increment : 1 pcs
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