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ZXMN6A25N8TA

Part No ZXMN6A25N8TA
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 8SO
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 4.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 20.4nC @ 10V
Max Input Capacitance 1063pF @ 30V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.56W (Ta)
Maximum Rds On at Id,Vgs 50 mOhm @ 3.6A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 057861-ZXMN6A25N8TA
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian ZXMN6A25N8TA CAD Model

Description

Introducing the ZXMN6A25N8TA - A High-Performance MOSFET from Diodes Incorporated

Diodes Incorporated presents the ZXMN6A25N8TA, a cutting-edge metal-oxide-semiconductor field-effect transistor (MOSFET) designed for high efficiency and power density applications. This device is a testament to Diodes Incorporated's commitment to providing innovative semiconductor solutions that meet the evolving needs of the electronics industry.

Key Features

  • Low On-Resistance: The ZXMN6A25N8TA boasts an exceptionally low on-resistance (R<sub>DS(on)), which minimizes conduction losses and enhances overall efficiency, making it an ideal choice for power management tasks.
  • High Continuous Drain Current: With a high continuous drain current (I<sub>D), this MOSFET can handle significant power, suitable for a variety of demanding applications.
  • Enhanced Thermal Performance: The device is designed with an advanced thermal management system that ensures reliable operation even under high-temperature conditions.
  • Compact Package: Encased in a small footprint package, the ZXMN6A25N8TA saves valuable board space without compromising on performance.

Applications

The versatility of the ZXMN6A25N8TA allows it to be used in a wide range of applications, including:

  • Power Supplies
  • DC-DC Converters
  • Motor Drives
  • Battery Management Systems
  • Load Switches
  • Power Management in Portable Devices

Quality and Reliability

Diodes Incorporated is well-known for its stringent quality control and the ZXMN6A25N8TA is no exception. It is manufactured with high-quality materials and subjected to rigorous testing to ensure it meets the highest standards of reliability and performance.

Environmental Compliance

The ZXMN6A25N8TA is not only a high-performance component but also environmentally friendly. It complies with RoHS standards, which restricts the use of certain hazardous materials in electronic equipment, reflecting Diodes Incorporated's commitment to environmental sustainability.

Whether you're designing for power efficiency or looking for a robust MOSFET capable of handling high currents, the ZXMN6A25N8TA from Diodes Incorporated is an excellent choice that offers reliability, performance, and environmental compliance.

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Pricing & Ordering

Quantity Unit Price Ext. Price
120+ $0.4897 $58.7640
290+ $0.4019 $116.5510
450+ $0.3892 $175.1400
615+ $0.3777 $232.2855
795+ $0.3650 $290.1750
1,065+ $0.3269 $348.1485
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 90,050 pieces
MOQ: 120 pcs
Order Increment : 1 pcs
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