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ZXTBM322TA

Part No ZXTBM322TA
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Single
Description TRANS NPN 20V 4.5A 2X2MM 3-MLP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity NPN
Maximum Current Collector 4.5A
VCEO Maximum Collector-Emitter Breakdown Voltage 20V
Max Vce (sat) 270mV @ 125mA, 4.5A
Collector Cut-off Current(Max) 25nA
Typical Gain (hFE) (Min) 200 @ 2A, 2V
Maximum Power Dissipation 3W
Frequency - Transition 140MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 3-MLP/DFN (2x2)
Win Source Part Number 1120430-ZXTBM322TA
Popularity Medium
Supply and Demand Status Balance
Quantity per package 3k pcs
Ultra Librarian 3D Model Ultra Librarian ZXTBM322TA CAD Model

Description

Introducing the ZXTBM322TA - A High-Performance Bipolar Transistor from Diodes Incorporated

The ZXTBM322TA is a cutting-edge bipolar transistor that epitomizes the commitment of Diodes Incorporated to providing high-quality, reliable components for various electronic applications. This product is designed to cater to the needs of designers and engineers who demand superior performance, efficiency, and longevity in their power management and signal amplification tasks.

With its robust construction, the ZXTBM322TA boasts an impressive continuous collector current rating, making it an ideal choice for high-power applications. Its high gain bandwidth product ensures that it can handle a wide range of frequencies without compromising on performance, thereby making it suitable for amplifying both analog and digital signals.

The ZXTBM322TA is housed in a compact SOT-89 package, which not only saves valuable board space but also provides excellent thermal performance. This packaging, combined with its low saturation voltage, ensures that the device operates efficiently with minimal power loss, thereby enhancing the overall energy efficiency of the end application.

One of the key features of the ZXTBM322TA is its high hFE (DC current gain) rating, which allows for a high level of amplification with minimal base drive current. This characteristic is particularly beneficial in applications where input power is limited or where it is imperative to minimize power consumption.

Furthermore, the ZXTBM322TA is characterized by its fast switching speeds, making it an excellent choice for switching applications such as DC-DC converters, motor drivers, and power regulators. Its ability to switch rapidly between states contributes to the reduction of transition losses and improves the efficiency and response time of the circuitry.

Diodes Incorporated has ensured that the ZXTBM322TA meets the stringent quality and reliability standards expected by the industry. It is RoHS compliant and free from harmful substances, aligning with global environmental directives and making it a responsible choice for environmentally conscious manufacturers.

In conclusion, the ZXTBM322TA from Diodes Incorporated is a versatile and high-performing bipolar transistor that offers a blend of efficiency, power handling, and fast switching capabilities. Its compact footprint and robust design make it an excellent choice for a wide array of electronic applications, solidifying its position as a valuable component in the semiconductor market.

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Pricing & Ordering

Quantity Unit Price Ext. Price
225+ $0.2610 $58.7250
540+ $0.2148 $115.9920
835+ $0.2079 $173.5965
1,150+ $0.2010 $231.1500
1,480+ $0.1952 $288.8960
1,990+ $0.1744 $347.0560
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,000 pieces
MOQ: 225 pcs
Order Increment : 1 pcs
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