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ZXTN07012EFFTA

Part No ZXTN07012EFFTA
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Single
Description TRANS NPN 12V 4.5A SOT23F-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Transistor Polarity NPN
Maximum Current Collector 4.5A
VCEO Maximum Collector-Emitter Breakdown Voltage 12V
Max Vce (sat) 320mV @ 45mA, 4.5A
Collector Cut-off Current(Max) 50nA (ICBO)
Typical Gain (hFE) (Min) 500 @ 100mA, 2V
Maximum Power Dissipation 1.5W
Frequency - Transition 220MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23F
Win Source Part Number 004894-ZXTN07012EFFTA
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian ZXTN07012EFFTA CAD Model

Description

The ZXTN07012EFFTA is a high-performance, low-saturation NPN bipolar junction transistor (BJT) from Diodes Incorporated, a leading manufacturer and supplier of high-quality semiconductor products. This transistor is designed to deliver efficient power management and signal processing in a wide range of electronic applications.

Key Features

  • Low V<sub>CE(sat): The ZXTN07012EFFTA boasts a very low collector-emitter saturation voltage, which enhances overall energy efficiency by minimizing power losses during switching.
  • High Continuous Collector Current: With a continuous collector current (I<sub>C) of up to 4A, this transistor can handle high levels of current, making it suitable for power-intensive applications.
  • High Power Dissipation: The device has a power dissipation of up to 3W, which allows it to withstand high power levels without compromising performance.
  • High h<sub>FE: It features a high current gain (h<sub>FE), ensuring that the transistor can amplify weak signals effectively.
  • High Maximum Operating Temperature: The ZXTN07012EFFTA can operate at temperatures up to 150°C, making it reliable in harsh environmental conditions.

Applications

The versatile nature of the ZXTN07012EFFTA makes it suitable for a variety of applications, including:

  • Power management circuits
  • DC-DC converters
  • Motor control systems
  • LED lighting
  • Signal amplification

Package and Quality

The transistor is housed in a SOT23F package, which is known for its compact footprint and excellent thermal performance. This packaging ensures that the ZXTN07012EFFTA is not only space-efficient but also robust in terms of heat management. Diodes Incorporated is committed to the highest standards of quality, and this product complies with international quality and environmental standards, ensuring reliability and sustainability.

Conclusion

In conclusion, the ZXTN07012EFFTA from Diodes Incorporated is a high-quality, efficient NPN transistor that offers low power loss, high current handling, and robust performance in a variety of electronic applications. Its compact size, combined with its impressive electrical characteristics, makes it an excellent choice for designers looking to optimize their power management and signal processing systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
180+ $0.3284 $59.1120
430+ $0.2695 $115.8850
665+ $0.2610 $173.5650
915+ $0.2526 $231.1290
1,185+ $0.2443 $289.4955
1,585+ $0.2190 $347.1150
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,000 pieces
MOQ: 180 pcs
Order Increment : 1 pcs
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