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Same model may have multiple batches, images only for reference.
FCP25N60N_F102 Real Image
Same model may have multiple batches, images only for reference.

FCP25N60N_F102

Part No FCP25N60N_F102
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 25A TO220-3
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 74nC @ 10V
Max Input Capacitance 3352pF @ 100V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 216W (Tc)
Maximum Rds On at Id,Vgs 125 mOhm @ 12.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220
Dimension TO-220-3
Win Source Part Number 1037897-FCP25N60N_F102
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian FCP25N60N_F102 CAD Model

Description

The FCP25N60N_F102 is a high-performance MOSFET from Fairchild/ON Semiconductor.

  • Designed for: use in a wide range of electronic applications that require high voltage and current capabilities
  • Maximum Voltage Rating: 600V
  • Continuous Current Rating: 25A
  • Ideal for: power supply circuits, motor control circuits, and other high-power applications
  • Package: standard TO-220 package
  • Operating Temperature Range: -55°C to 150°C
  • Popular choice: due to its high performance, reliability, and ease of use

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