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Same model may have multiple batches, images only for reference.
FDA69N25 Real Image
Same model may have multiple batches, images only for reference.

FDA69N25

Part No FDA69N25
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 250V 69A TO-3P
Datasheet
FDA69N25 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 250V
Continuous Drain Current at 25°C 69A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 100nC @ 10V
Max Input Capacitance 4640pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 480W (Tc)
Maximum Rds On at Id,Vgs 41 mOhm @ 34.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-3PN
Dimension TO-3P-3, SC-65-3
Win Source Part Number 1037950-FDA69N25
Popularity Medium
Supply and Demand Status Sufficient
Quantity per package 450
Ultra Librarian 3D Model Ultra Librarian FDA69N25 CAD Model

Description

The Fairchild/ON Semiconductor FDA69N25 is an N-channel MOSFET.

  • Power Dissipation: 480W (Tc)
  • Packaging: Tube/Rail
  • Mounting: Through Hole
  • Gate Voltage: 10V
  • Status: Active
  • Supply and Demand: Sufficient
  • Drain-Source Breakdown Voltage: 250V
  • Continuous Drain Current: 69A (Tc)
  • Gate-Source Threshold Voltage: 5V @ 250μA
  • Maximum Gate Charge: 100nC @ 10V
  • Maximum Input Capacitance: 4640pF @ 25V
  • Maximum Gate-Source Voltage: ±30V
  • Maximum Rds On @ Id, Vgs: 41 mOhm @ 34.5A, 10V

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