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Same model may have multiple batches, images only for reference.
FDB8878 Real Image
Same model may have multiple batches, images only for reference.

FDB8878

Part No FDB8878
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 48A D2PAK
Datasheet
FDB8878 Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 48A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 23nC @ 10V
Max Input Capacitance 1235pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 47.3W (Tc)
Maximum Rds On at Id,Vgs 14 mOhm @ 40A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK (TO-263AB)
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1037995-FDB8878
Popularity Medium
Supply and Demand Status Sufficient
Application Field Used in Power Management, Consumer Electronics, Portable Devices, Industrial
Ultra Librarian 3D Model Ultra Librarian FDB8878 CAD Model

Description

The Fairchild/ON Semiconductor FDB8878 is an N-channel MOSFET that is used in power management, consumer electronics, portable devices, and industrial applications.

  • Power Dissipation: 47.3W (Tc)
  • Drain-Source Breakdown Voltage: 30V
  • Maximum Rds On @ Id,Vgs: 14 mOhm @ 40A, 10V
  • Package: D2PAK (TO-263AB)
  • Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supply and Demand Status: Sufficient

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Pricing & Ordering

Quantity Unit Price Ext. Price
95+ $0.6334 $60.1730
225+ $0.5198 $116.9550
345+ $0.5036 $173.7420
475+ $0.4873 $231.4675
615+ $0.4710 $289.6650
825+ $0.4223 $348.3975
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 70,000 pieces
MOQ: 95 pcs
Order Increment : 1 pcs
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