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Same model may have multiple batches, images only for reference.
FDD5N53TM_WS Real Image
Same model may have multiple batches, images only for reference.

FDD5N53TM_WS

Part No FDD5N53TM_WS
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 530V 4A DPAK
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 530V
Continuous Drain Current at 25°C 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 15nC @ 10V
Max Input Capacitance 640pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 40W (Tc)
Maximum Rds On at Id,Vgs 1.5 Ohm @ 2A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1038082-FDD5N53TM_WS
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian FDD5N53TM_WS CAD Model

Description

The Fairchild/ON Semiconductor FDD5N53TM_WS is an N-Channel MOSFET.

  • Maximum Power Dissipation: 40W (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Mounting Technology: SMD (SMT)
  • Category: Discrete semiconductor products
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Case or Package: D-Pak
  • Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Drain-Source Breakdown Voltage: 530V
  • Continuous Drain Current @ 25°C: 4A (Tc)
  • Gate-Source Threshold Voltage: 5V @ 250μA
  • Maximum Gate Charge: 15nC @ 10V
  • Maximum Input Capacitance: 640pF @ 25V
  • Maximum Gate-Source Voltage: ±30V
  • Maximum Rds On @ Id,Vgs: 1.5 Ohm @ 2A, 10V
  • Lifecycle Status: Obsolete (EOL)
  • Popularity: Medium
  • Supply and Demand Status: Sufficient

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