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FDD5N60NZ

Part No FDD5N60NZ
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description N-Channel UniFET II MOSFET 600 V, 4.0 A, 2 Ohm
Sample
Rohs State rohs
ECAD Module
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Manufacturer Fairchild/ON Semiconductor
Win Source Part Number 1173768-FDD5N60NZ
Manufacturer Homepage www.fairchildsemi.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian FDD5N60NZ CAD Model

Description

The FDD5N60NZ is a 600V N-Channel MOSFET from Fairchild Semiconductor (now ON Semiconductor). It is part of the SupreMOS® MOSFET family, designed to offer superior switching performance and higher avalanche energy, making it suitable for demanding power applications.

Applications

  • Switch Mode Power Supplies (SMPS)
  • Power Factor Correction (PFC)
  • Lighting Ballasts
  • DC-DC Converters
  • Motor Control
  • Solar Inverters

Features

  • High Voltage Rating: 600V drain-source voltage capability.
  • Low On-Resistance: Reduces conduction losses, improving efficiency.
  • Low Gate Charge: Minimizes switching losses, improving efficiency at high frequencies.
  • High Avalanche Energy: Robust performance under avalanche conditions.
  • SupreMOS® Technology: Fairchild's advanced MOSFET technology for superior performance.
  • RoHS Compliant: Environmentally friendly and compliant with regulations.

Benefits

  • Increased Efficiency: Lower on-resistance and switching losses contribute to higher overall efficiency in power conversion applications.
  • Improved Reliability: High avalanche energy ensures robust operation under voltage stress.
  • Reduced Heat Dissipation: Lower power losses result in less heat generation, simplifying thermal management.
  • Simplified Design: Easier to implement in power supply designs due to its predictable characteristics.
  • Compliance: RoHS compliance ensures adherence to environmental regulations.

Additional Details

The FDD5N60NZ has a drain-source voltage (VDS) of 600V and a continuous drain current (ID) of 5A (at Tc = 25°C). It features a low typical on-resistance (RDS(on)), contributing to its high efficiency. The device is typically supplied in a D-PAK (TO-252) package. The gate threshold voltage (VGS(th)) is typically around 3V. The SupreMOS® technology enables a smaller die size with improved performance characteristics. The device's fast switching speed and low gate charge (Qg) contribute to reduced switching losses. This MOSFET is well-suited for applications requiring high voltage operation, high efficiency, and robustness. The D-PAK package is a surface mount package suitable for automated assembly. The device is designed to operate over a wide temperature range. It is designed for high dv/dt capability. It can withstand repetitive avalanche events.

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.6817 $58.8595
85+ $1.3802 $117.3170
130+ $1.3363 $173.7190
180+ $1.2936 $232.8480
235+ $1.2509 $293.9615
310+ $1.1215 $347.6650
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,480 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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