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Same model may have multiple batches, images only for reference.
FDD6530A Real Image
Same model may have multiple batches, images only for reference.

FDD6530A

Part No FDD6530A
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 21A D-PAK
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 21A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 1.2V @ 250μA
Max Gate Charge 9nC @ 4.5V
Max Input Capacitance 710pF @ 10V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 3.3W (Ta), 33W (Tc)
Maximum Rds On at Id,Vgs 32 mOhm @ 8A, 4.5V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package TO-252
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 015945-FDD6530A
Popularity Medium
Supply and Demand Status Balance
Quantity per package 2,500
Ultra Librarian 3D Model Ultra Librarian FDD6530A CAD Model

Description

Product Description

The FDD6530A is engineered for efficiency and performance in high-power applications. Featuring a low threshold voltage and excellent thermal performance, this N-channel MOSFET is tailored to meet the demands of cutting-edge electronic designs.

Features and Benefits

  • Low threshold voltage for easy gate drive
  • High power efficiency
  • Excellent thermal performance
  • Compact form factor

Applications

  • Battery protection circuits
  • Industrial power systems
  • High-energy power management
  • Renewable energy converters

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Pricing & Ordering

Quantity Unit Price Ext. Price
50+ $1.2513 $62.5650
115+ $1.0267 $118.0705
175+ $0.9946 $174.0550
240+ $0.9626 $231.0240
315+ $0.9305 $293.1075
420+ $0.8341 $350.3220
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Availability: 16,615 pieces
MOQ: 50 pcs
Order Increment : 1 pcs
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