The FDG6306PNL is a P-Channel PowerTrench® MOSFET from Fairchild Semiconductor (now ON Semiconductor), designed for low voltage, low on-resistance switching applications.

Applications

• Load switching in portable devices
• Battery management systems
• Power management in smartphones and tablets
• DC-DC conversion
• Solid-state relays

Features

• Low on-resistance (RDS(on))
• Low threshold voltage (VGS(th))
• High power and current handling capability
• Small footprint using a MicroFET 2x2 package
• RoHS compliant

Benefits

• Increased efficiency in power switching
• Logic level compatible gate drive
• Compact design for space-constrained applications
• Environmentally friendly

Additional Details

The FDG6306PNL has a drain-source voltage (VDS) rating of -20V and a continuous drain current (ID) of -2.9A. The low RDS(on) helps to minimize power losses in switching applications. The MicroFET 2x2 package enables compact designs. Its low threshold voltage makes it compatible with low-voltage logic circuits. It is suited for load switching applications. Its characteristics make it useful for low power DC-DC converters. Its design lends it to use in battery-powered applications, where low on-resistance is critical. The fast switching speed is useful in modern power supplies, and the small footprint makes it possible to create highly compact devices.