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Same model may have multiple batches, images only for reference.
FDG6313N Real Image
Same model may have multiple batches, images only for reference.

FDG6313N

Part No FDG6313N
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH 25V 0.5A 6-Pin SC-70 / MOSFET 2N-CH 25V 0.5A SC70-6
Datasheet
FDG6313N Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 500mA
Maximum Rds On at Id,Vgs 450 mOhm @ 500mA, 4.5V
Gate-Source Threshold Voltage 1.5V @ 250μA
Max Gate Charge 2.3nC @ 4.5V
Max Input Capacitance 50pF @ 10V
Maximum Power Dissipation 300mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SC-70-6
Win Source Part Number 066956-FDG6313N
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name FDG6313N
Introduction Date April 29, 2002
ECCN EAR99
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian FDG6313N CAD Model

Description

The FDG6313N is a Dual N-Channel Logic Level Gate FET from Fairchild/ON Semiconductor.

  • Maximum Power Dissipation: 300mW
  • Drain-Source Breakdown Voltage: 25V
  • Continuous Drain Current: 500mA
  • Maximum Rds On: 450 mOhm @ 500mA, 4.5V
  • Gate-Source Threshold Voltage: 1.5V @ 250μA
  • Maximum Gate Charge: 2.3nC @ 4.5V
  • Package: SC-70-6
  • Mounting: SMD (SMT)
  • Status: Obsolete (EOL)
  • Category: Discrete Semiconductor Products

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Quantity Unit Price Ext. Price
420+ $0.1381 $58.0020
1,020+ $0.1133 $115.5660
1,580+ $0.1097 $173.3260
2,175+ $0.1063 $231.2025
2,815+ $0.1027 $289.1005
3,765+ $0.0921 $346.7565
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