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FDG6335N

Part No FDG6335N
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH 20V 0.7A 6-Pin SC-88 T/R / MOSFET 2N-CH 20V 0.7A SOT-363
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 700mA
Maximum Rds On at Id,Vgs 300 mOhm @ 700mA, 4.5V
Gate-Source Threshold Voltage 1.5V @ 250μA
Max Gate Charge 1.4nC @ 4.5V
Max Input Capacitance 113pF @ 10V
Maximum Power Dissipation 300mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SC-70-6
Win Source Part Number 015995-FDG6335N
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Quantity per package 3k pcs
Family Name FDG6335N
Introduction Date October 01, 2001
ECCN EAR99
Country of Origin China, Philippines
Halogen Free Compliant
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian FDG6335N CAD Model

Description

The FDG6335N is a 2 N-Channel (Dual) FET from Fairchild/ON Semiconductor.

  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 700mA @ 25°C
  • Maximum Power Dissipation: 300mW
  • Gate-Source Threshold Voltage: 1.5V @ 250μA
  • Maximum Rds On: 300 mOhm @ 700mA, 4.5V
  • Case/Package: SC-70-6
  • Applications: Discrete semiconductor products
  • Supply and Demand: Balance
  • Halogen-Free Compliant: Yes
  • EOL Date (Estimated): 2027

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Pricing & Ordering

Quantity Unit Price Ext. Price
115+ $0.4414 $50.7610
245+ $0.4135 $101.3075
380+ $0.3995 $151.8100
540+ $0.3716 $200.6640
700+ $0.3576 $250.3200
875+ $0.3437 $300.7375
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 87,000 pieces
MOQ: 115 pcs
Order Increment : 1 pcs
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Shipping Information

Shipped from HK warehouse
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