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Same model may have multiple batches, images only for reference.
FDH15N50 Real Image
Same model may have multiple batches, images only for reference.

FDH15N50

Part No FDH15N50
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 15A TO-247
Datasheet
FDH15N50 Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 15A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 41nC @ 10V
Max Input Capacitance 1850pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 300W (Tc)
Maximum Rds On at Id,Vgs 380 mOhm @ 7.5A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-247
Dimension TO-247-3
Win Source Part Number 1038155-FDH15N50
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian FDH15N50 CAD Model

Description

The Fairchild/ON Semiconductor FDH15N50 is a N-channel MOSFET that is designed to provide reliable performance for various applications.

  • Maximum Power Dissipation: 300W
  • Drain-Source Breakdown Voltage: 500V
  • Package: TO-247
  • Mounting Style: Through-Hole
  • Continuous Drain Current: 15A
  • Maximum Rds On: 380 mOhm @ 7.5A, 10V
  • Halogen-Free: Yes
  • ECCN Compliance: Yes

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