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FDI038AN06A0

Part No FDI038AN06A0
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 80A TO-262AB
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 17A (Ta), 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 124nC @ 10V
Max Input Capacitance 6400pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 310W (Tc)
Maximum Rds On at Id,Vgs 3.8 mOhm @ 80A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package I2PAK (TO-262)
Dimension TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 066964-FDI038AN06A0
Popularity Medium
Supply and Demand Status Limited
Quantity per package 800
Ultra Librarian 3D Model Ultra Librarian FDI038AN06A0 CAD Model

Description

The FDI038AN06A0 is an N-Channel MOSFET manufactured by Fairchild/ON Semiconductor. It is designed for use in discrete semiconductor products and is packaged in a tube/rail with through-hole mounting.

  • Channel Type: N-Channel
  • Power Dissipation: 310W (Tc)
  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current (25°C): 17A (Ta), 80A (Tc)
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 124nC @ 10V
  • Maximum Input Capacitance: 6400pF @ 25V
  • Rds On (Max) @ Id,Vgs: 3.8 mOhm @ 80A, 10V
  • Mounting Type: Through-hole
  • Packaging: Tube/Rail
  • Popularity: Medium
  • Supply and Demand: Limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
18+ $3.2556 $58.6008
44+ $2.6713 $117.5372
67+ $2.5879 $173.3893
93+ $2.5044 $232.9092
120+ $2.4209 $290.5080
160+ $2.1705 $347.2800
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 31,000 pieces
MOQ: 18 pcs
Order Increment : 1 pcs
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Shipping Information

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