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Same model may have multiple batches, images only for reference.
FDMA2002NZ Real Image
Same model may have multiple batches, images only for reference.

FDMA2002NZ

Part No FDMA2002NZ
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 30V 2.9A 6-MICROFET
Datasheet
FDMA2002NZ Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 2.9A
Maximum Rds On at Id,Vgs 123 mOhm @ 2.9A, 4.5V
Gate-Source Threshold Voltage 1.5V @ 250μA
Max Gate Charge 3nC @ 4.5V
Max Input Capacitance 220pF @ 15V
Maximum Power Dissipation 650mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-MicroFET (2x2)
Win Source Part Number 092816-FDMA2002NZ
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Quantity per package 3k pcs
Ultra Librarian 3D Model Ultra Librarian FDMA2002NZ CAD Model

Description

The Fairchild/ON Semiconductor FDMA2002NZ is a dual N-channel logic level gate FET.

  • Power Dissipation (Max): 650mW
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current (25°C): 2.9A
  • Gate-Source Threshold Voltage: 1.5V @ 250μA
  • Rds On (Max) @ Id, Vgs: 123 mOhm @ 2.9A, 4.5V
  • Mounting Type: Surface Mount
  • Package Quantity: 3k pcs / reel

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.5606 $50.4540
220+ $0.4600 $101.2000
340+ $0.4457 $151.5380
465+ $0.4313 $200.5545
600+ $0.4169 $250.1400
805+ $0.3737 $300.8285
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 171,000 pieces
MOQ: 90 pcs
Order Increment : 1 pcs
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