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Same model may have multiple batches, images only for reference.
FDMA291P Real Image
Same model may have multiple batches, images only for reference.

FDMA291P

Part No FDMA291P
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET P-CH 20V 6.6A 6-Pin WDFN EP T/R / MOSFET P-CH 20V 6.6A MFET 2X2
Datasheet
FDMA291P Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 6.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 14nC @ 4.5V
Max Input Capacitance 1000pF @ 10V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 2.4W (Ta)
Maximum Rds On at Id,Vgs 42 mOhm @ 6.6A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-MicroFET (2x2)
Dimension 6-VDFN Exposed Pad
Win Source Part Number 016006-FDMA291P
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Quantity per package 3k pcs
Family Name FDMA291P
Introduction Date May 31, 2006
ECCN EAR99
Country of Origin Thailand
Halogen Free Compliant
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian FDMA291P CAD Model

Description

The Fairchild/ON Semiconductor FDMA291P is a P-channel MOSFET.

  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current (Max): 6.6A (Ta)
  • Rds On (Max): 42 mOhm @ 6.6A, 4.5V
  • Gate-Source Voltage (Max): ±8V
  • Temperature Range: -55°C to 150°C (TJ)
  • Package: 6-MicroFET (2x2) with exposed pad
  • Application: Power Management

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Pricing & Ordering

Quantity Unit Price Ext. Price
24+ $2.5024 $60.0576
57+ $2.0534 $117.0438
88+ $1.9891 $175.0408
120+ $1.9251 $231.0120
156+ $1.8609 $290.3004
208+ $1.6683 $347.0064
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Availability: 32,341 pieces
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