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FDMC6675BZ

Part No FDMC6675BZ
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 9.5A POWER33
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 9.5A (Ta), 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 65nC @ 10V
Max Input Capacitance 2865pF @ 15V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 2.3W (Ta), 36W (Tc)
Maximum Rds On at Id,Vgs 14.4 mOhm @ 9.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-MLP (3.3x3.3)
Dimension 8-PowerWDFN
Win Source Part Number 016027-FDMC6675BZ
Popularity Medium
Supply and Demand Status Balance
Quantity per package 3k pcs
Ultra Librarian 3D Model Ultra Librarian FDMC6675BZ CAD Model

Description

The Fairchild/ON Semiconductor 016027-FDMC6675BZ is a P-channel MOSFET suitable for use in discrete semiconductor products.

  • Power Dissipation: 2.3W (Ta), 36W (Tc)
  • Drain-Source Breakdown Voltage: 30V
  • Maximum Rds On: 14.4 mOhm @ 9.5A, 10V
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Gate Charge: 65nC @ 10V
  • Maximum Input Capacitance: 2865pF @ 15V
  • Supply and Demand Status: Balanced
  • Quantity per Package: 3k pcs

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Pricing & Ordering

Quantity Unit Price Ext. Price
85+ $0.5934 $50.4390
180+ $0.5558 $100.0440
280+ $0.5370 $150.3600
405+ $0.4995 $202.2975
525+ $0.4807 $252.3675
650+ $0.4619 $300.2350
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 21,000 pieces
MOQ: 85 pcs
Order Increment : 1 pcs
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