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Same model may have multiple batches, images only for reference.
FDMQ8403 Real Image
Same model may have multiple batches, images only for reference.

FDMQ8403

Part No FDMQ8403
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 4N-CH 100V 3.1A 12-MLP
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
FET Type 4 N-Channel (H-Bridge)
FET Feature Standard
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 3.1A
Maximum Rds On at Id,Vgs 110 mOhm @ 3A, 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 5nC @ 10V
Max Input Capacitance 215pF @ 15V
Maximum Power Dissipation 1.9W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 12-MLP (5x4.5)
Win Source Part Number 066989-FDMQ8403
Popularity Medium
Supply and Demand Status Balance
Quantity per package 3k pcs
Ultra Librarian 3D Model Ultra Librarian FDMQ8403 CAD Model

Description

The Fairchild/ON Semiconductor FDMQ8403 is a 4 N-channel (H-Bridge) MOSFET transistor designed for use in discrete semiconductor products.

  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current (25°C): 3.1A
  • Max Rds On (Id,Vgs): 110 mOhm @ 3A, 10V
  • Package: 12-MLP (5x4.5)
  • Maximum Power Dissipation: 1.9W

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102+ $2.4599 $250.9098
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Availability: 3,000 pieces
MOQ: 16 pcs
Order Increment : 1 pcs
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